SFH3401_01

NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3401 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform mit Basisanschluß, geeignet für Vapor Phase-Löten und IR-Reflow-Löten (JEDEC level 4) • Nur gegurtet lieferbar Anwendungen • Umgebungslicht-Detektor • Lichtschranken für Gleich- und Wechsellichtbetrieb • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Type SFH 3401 SFH 3401-2/3 Bestellnummer Ordering Code Q62702-P5014 Q62702-P5200 Features • Especially suitable for applications from 460 nm to 1080 nm • High linearity • SMT package with base connection, suitable for vapor phase and IR reflow soldering (JEDEC level 4) • Available only on tape and reel Applications • • • • Ambient light detector Photointerrupters Industrial electronics For control and drive circuits Gehäuse Package Klares Epoxy-Gieβharz, Kollektorkennzeichung: breiter Anschluß Transparent epoxy resin, collector marking: broad lead 2001-12-11 1 SFH 3401 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektor-Emitterspannung, t < 120 s Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Symbol Wert Value – 40 … + 100 20 70 50 100 7 120 450 Einheit Unit °C V V mA mA V mW K/W Top; Tstg VCE VCE IC ICS VEC Ptot RthJA 2001-12-11 2 SFH 3401 Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessungen der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Kapazität, VCB = 0 V, f = 1 MHz, E = 0 Capacitance Kapazität, VEB = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 10 V, E = 0 Fotostrom der Kollektor-Basis Fotodiode Photocurrent of collektor-base photodiode Ee = 0.1 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Symbol Symbol λS max λ Wert Value 850 460 … 1080 Einheit Unit nm nm A L×B L×W ϕ 0.55 1×1 ± 60 15 45 19 3 (≤ 200) mm2 mm × mm Grad deg. pF pF pF nA CCE CCB CEB ICEO IPCB IPCB 0.28 4.8 µA µA 2001-12-11 3 SFH 3401 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, λ = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht A/ standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ Kollektor-EmitterSättigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) × 0.3, Ee = 0.1 mW/cm2 Stromverstärkung Current gain Ee = 0.1 mW/cm2, VCE = 5 V 1) 1) Symbol Symbol -1 -2 Wert Value -3 Einheit Unit IPCE IPCE tr, tf 63 … 125 1.65 16 100 … 200 2.6 24 160 … 320 4.2 34 µA mA µs VCEsat 170 170 170 mV IPCE/IPCB 340 530 860 – IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2001-12-11 4 SFH 3401 Rel. Spectral Sensitivity, Srel = f (λ) 100 S rel % 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 nm 1100 λ 10 -4 -3 10 10 -2 mW/cm 2 Ee 10 0 0 -2 10 10 -1 10 0 10 1 V 10 2 VCE OHF02332 Photocurrent IPCE = f (Ee), VCE = 5 V Ι pce 10 1 mA 1 2 3 OHF00326 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 C CE 20 pF OHF02344 10 0 15 10 -1 10 10 -2 5 10 -3 Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 °C Ι PCE 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 Dark Current ICEO = f (TA), VCE = 10 V, E = 0 Ι CEO 10 3 nA OHF02342 Collector-Base Capacitance CCB = f (VCB), f = 1 MHz, E = 0 C CB 50 pF 45 40 OHF00332 Ι PCE 1.6 OHF01524 10 2 35 30 10 1 25 20 15 10 0 10 5 0 25 50 75 C 100 TA 10 -1 0 20 40 60 80 ˚C 100 TA 0 -2 10 10 -1 10 0 10 1 V 10 2 V CB Photocurrent IPCE = f (VCE) SFH 3401-3 Ι pce 3.0 mA 2.5 1.0 mW/cm 2 OHF00327 Dark Current ICEO = f (VCE), E = 0 Ι CEO 10 2 nA OHF02341 Emitter-Base Capacitance CEB = f (VEB), f = 1 MHz, E = 0 C EB 20 pF 18 16 OHF00333 10 1 2.0 14 12 1.5 0.5 mW/cm 2 1.0 0.25 mW/cm 2 0.5 0.1 mW/cm 2 0 10 0 10 8 6 10 -1 4 2 10 -2 0 10 20 30 40 50 60 V 70 Vce 0 10 20 30 40 50 V 70 V CE 0 -2 10 10 -1 10 0 10 1 V 10 2 V EB 2001-12-11 5 SFH 3401 Total Power Dissipation Ptot = f (TA) Ptot 140 mW 120 100 80 3 60 2 40 20 0 1 OHFD0228 Photocurrent IPCE = f (VCE), IB = Parameter Ι PCE 6 mA 5 6 µA 5 µA 4 4 µA 3 µA 2 µA 1 µA OHF00334 0 20 40 60 80 C 100 TA 0 0 2 4 6 8 10 12 14 16 V 20 V CE 2001-12-11 6 SFH 3401 Maßzeichnung Package Outlines Chip position 0.3 (0.012) 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 1.0 (0.039) 0.0 (0.000) 0.3 (0.012) 2.1 (0.083) 0.9 (0.035) GEOY6973 4.8 (0.189) 4.4 (0.173) Active area 0.55 mm 2 0.7 (0.028) 0.3 (0.012) Collector 0.8 (0.031) 0.6 (0.024) Base 0.5 (0.020) 1.9 (0.075) Emitter 2.7 (0.106) 2.5 (0.098) Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-12-11 7 1.1 (0.043)