Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4202
Vorläufige Daten / Preliminary Data
Wesentliche Merkmale • Leistungsstarke GaAs-LED (35 mW) • Hoher Wirkunsgrad bei kleinen Strömen • Hohe Fluss-Ströme bei hohen Temperturen möglich • Homogene Abstrahlung • Typische Peakwellenlänge 950nm Anwendungen • Schnelle Datenübertragung mit Übertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia) • Analoge und digitale Hi-Fi Audio- und Videosignalübertragung • Alarm- und Sicherungssysteme • IR Freiraumdatenübertragung • IR-Scheinwerfer für Kameras Features • High Power GaAs-LED (35 mW) • High Efficiency at low currents • High Forward current possible at high temperatures • Homogeneous Radiation Pattern • Typical peak wavelength 950nm Applications • High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia) • Analog and digital Hi-Fi audio and video signal transmission • Alarm and safety equipment • IR free air data transmission • IR spotlight for cameras
Typ Type SFH 4202
1)
Bestellnummer Strahlstärkegruppierung 1) (IF = 100 mA, tp = 20 ms) Ordering Code Radiant Intensity Grouping 1) Ie (mW/sr) on request 10 (≥ 4)
gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr
2005-02-25
1
SFH 4202
Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value – 40 … + 100 3 100 2.2 180 300 Einheit Unit °C V mA A mW K/W
Top; Tstg VR IF (DC) IFSM Ptot
Wärmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgröße je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Wärmewiderstand Sperrschicht - Lötstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block
130
K/W
2005-02-25
2
SFH 4202
Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Symbol Symbol λpeak Wert Value 950 Einheit Unit nm
∆λ
40
nm
ϕ
± 60 0.09 0.3 × 0.3 10
Grad deg. mm2 mm ns
A L×B L×W
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to10%, IF = 100 mA, tp = 20 ms, RL = 50 Ω Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Sperrstrom Reverse current VR = 3 V Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms
VF VF IR
1.5 (≤ 1.8) 3.2 (≤ 4.3) 0.01 (≤ 10)
V V µA
Φe
35
mW
Temperaturkoeffizient von Ie bzw. Φe, TCI IF = 100 mA Temperature coefficient of Ie or Φe, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von λ, IF = 100 mA Temperature coefficient of λ, IF = 100 mA
– 0.44
%/K
TCV TCλ
– 1.5 + 0.2
mV/K nm/K
2005-02-25
3
SFH 4202
Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs Symbol Ie min. Ie typ. Ie typ. Werte Values 4 10 60 Einheit Unit mW/sr mW/sr mW/sr
2005-02-25
4
SFH 4202
Relative Spectral Emission Irel = f (λ)
100
OHF00777
Radiant Intensity
Ie = f (IF ) Ie 100 mA
Single pulse, tp = 20 µs
10 2 Ιe Ι e (100 mA)
OHF00809
Max. Permissible Forward Current IF = f (T A )
120 mA
OHL01293
Ι erel
80
I F 100
80
60
10 0
60
40
10
-1
40
20
10 -2
20
TA temp. ambient
0 800 850 900 950 1000 nm 1100
10 -3 10 0 10 1 10 2 10 3 mA 10 4 ΙF
0
0
20
40
60
80 ˚C 100
λ
TA
Forward Current IF = f (VF) single pulse, tp = 20 µs
10 4 mA 10
3 OHF00784
Permissible Pulse Handling Capability IF = f (τ), TA = 25 °C, duty cycle D = parameter
IF
101 A 5
OHF00040
ΙF
P D= T
t
tP
IF T D=
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
10 2 10 1 10 0
100 5
10 -1 10 -2 10 -3
0 0.5 1 1.5 2 2.5 3 3.5
V 4.5
10-1 -5 10 10-4 10-3 10-2 10-1 100 101 s 10 2
VF
tp
10˚ 0˚
Radiation Characteristics Irel = f (ϕ
40˚ 30˚ 20˚
OHL01660
ϕ
1.0
50˚
0.8
0.6 60˚ 0.4 70˚ 0.2 80˚ 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 0
2005-02-25
5
SFH 4202
Maßzeichnung Package Outlines
3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 0.8 (0.031) 0.6 (0.024) 2.1 (0.083) A A
3.7 (0.146) 3.3 (0.130) 4˚±1
2.1 (0.083) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028) 0.1 (0.004) (typ.)
A
A
(2.4) (0.095)
3.4 (0.134) 3.0 (0.118)
1.1 (0.043)
A
C Package marking
0.5 (0.020)
0.6 (0.024) 0.4 (0.016)
A
C
0.18 (0.007) 0.12 (0.005)
GPLY6084
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch) Anode: see marking “A” in drawing
2005-02-25
6
SFH 4202
Empfohlenes Lötpaddesign Recommended Solder Pad IR Flow Löten IR Reflow Soldering
Fläche darf elektrisch nicht beschaltet werden. Do not use this area for electrical contact. 3.3 (0.130) Anode 3.3 (0.130)
Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation 2.3 (0.091) 0.8 (0.031)
1.1 (0.043)
0.7 (0.028) Kathode/ Cathode
Fläche darf elektrisch nicht beschaltet werden. Do not use this area for electrical contact. Lötstoplack Solder resist
_ Cu Fläche / < 16 mm 2 per pad Cu-area
11.1 (0.437)
3.7 (0.146)
1.5 (0.059)
OHLPY440
Empfohlenes Lötpaddesign Recomended Solder Pad
Wellenlöten (TTW) TTW Soldering
Fläche darf elektrisch nicht beschaltet werden. Do not use this area for electrical contact.
2 (0.079)
Anode 6.1 (0.240) 2.8 (0.110)
2 (0.079)
3 (0.118)
2 (0.079)
2.8 (0.110) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation
0.5 (0.020)
Kathode/ Cathode Cu Fläche / > 16 mm 2 per pad Cu-area Lötstoplack Solder resist
OHAY1583
Fläche darf elektrisch nicht beschaltet werden. Do not use this area for electrical contact.
2005-02-25
7
Bewegungsrichtung der Platine PCB-direction
6 (0.236)
1 (0.039)
SFH 4202
Lötbedingungen Soldering Conditions IR-Reflow Lötprofil für bleifreies Löten IR Reflow Soldering Profile for lead free soldering
300 ˚C 255 ˚C 240 ˚C 217 ˚C 200 30 s max 150 120 s max 100 Ramp Up 3 K/s (max) 25 ˚C 0 0 50 100 150 200 250 s 300 100 s max Ramp Down 6 K/s (max) 10 s min
Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020B) (acc. to J-STD-020B)
OHLA0687
T
250
Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile
˚C 260 ˚C +0˚C -5 245 ˚C ±5 ˚C ˚C 235 ˚C +5˚C -0
50
min. condition for IR Reflow Soldering: solder point temperature ≥ 235 °C for at least 10 sec.
t
Wellenlöten (TTW) TTW Soldering
300 C T 250 235 C ... 260 C 2. Welle 2. wave 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling ca 200 K/s 5 K/s 2 K/s
(nach CECC 00802) (acc. to CECC 00802)
OHLY0598
10 s
Normalkurve standard curve Grenzkurven limit curves
0 0 50 100 150 t 200 s 250
2005-02-25
8
SFH 4202
Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2005-02-25 9
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