DMN2022UFDF-7

DMN2022UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features RDS(ON) Max ID Max TA = +25°C  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2 22mΩ @ VGS = 4.5V 7.9A  Low Gate Threshold Voltage 7.2A  Fast Switching Speed     ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ 26mΩ @ VGS = 2.5V 20V 36mΩ @ VGS = 1.8V 6.1A 50mΩ @ VGS = 1.5V 5.2A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Mechanical Data      Battery Management Application Power Management Functions DC-DC Converters    Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) D U-DFN2020-6 (Type F) G ESD PROTECTED Gate Protection Diode Top View Bottom View S Pin Out Bottom View Internal Schematic Reel Size (inches) 7 13 Quantity per Reel 3,000 10,000 Ordering Information (Note 4) Part Number DMN2022UFDF-7 DMN2022UFDF-13 Notes: Marking NC NC 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain