IRFB4020

PD - 97195 IRFB4020PbF DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI Key Parameters VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max 200 80 18 6.7 3.2 175 V m: nC nC Ω °C • 175°C operating junction temperature for ruggedness D • Can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier G S TO-220AB Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Max. Units Drain-to-Source Voltage 200 V Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ±20 18 A Power Dissipation Power Dissipation 100 52 W 0.70 -55 to + 175 W/°C °C f f 13 52 c Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 300 x x 10lb in (1.1N m) Thermal Resistance f Parameter RθJC Junction-to-Case RθCS RθJA Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Typ. ––– 0.50 Max. 1.43 ––– ––– 62 Units °C/W Notes  through … are on page 2 www.irf.com 1 03/03/06 IRFB4020PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 200 ––– ––– ∆ΒVDSS/∆TJ RDS(on) VGS(th) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.23 80 ––– 100 Gate Threshold Voltage Gate Threshold Voltage Coefficient 3.0 ––– ––– -13 4.9 ––– Drain-to-Source Leakage Current ––– ––– ––– ––– 20 250 µA VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 20V VGS = -20V gfs Forward Transconductance Total Gate Charge 24 ––– ––– 18 ––– 29 S VDS = 50V, ID = 11A Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 4.5 1.4 ––– ––– Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 5.3 6.8 ––– ––– Internal Gate Resistance ––– ––– 6.7 3.2 ––– ––– Turn-On Delay Time Rise Time ––– ––– 7.8 12 ––– ––– Turn-Off Delay Time Fall Time ––– ––– 16 6.3 ––– ––– Input Capacitance Output Capacitance ––– ––– 1200 91 ––– ––– Reverse Transfer Capacitance Effective Output Capacitance ––– ––– 20 110 ––– ––– ƒ = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 160V Internal Drain Inductance ––– 4.5 ––– Between lead, ∆VGS(th)/∆TJ IDSS Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG(int) td(on) tr td(off) tf Ciss Coss Crss Coss eff. LD V e V VDS = VGS, ID = 100µA mV/°C nC Internal Source Inductance ––– 7.5 VDS = 100V VGS = 10V ID = 11A See Fig. 6 and 18 Ω e VDD = 100V, VGS = 10V ID = 11A ns RG = 2.4Ω pF VGS = 0V VDS = 50V nH LS VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 11A ––– D 6mm (0.25in.) from package G and center of die contact S Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current g Repetitive Avalanche Energy Typ. d Max. Units ––– 94 See Fig. 14, 15, 16a, 16b g mJ A mJ Diode Characteristics Parameter IS @ TC = 25°C Continuous Source Current Min. Typ. Max. Units ––– ––– 18 ISM (Body Diode) Pulsed Source Current ––– ––– 52 VSD (Body Diode) Diode Forward Voltage ––– ––– 1.3 trr Qrr c Conditions MOSFET symbol A V Reverse Recovery Time ––– 82 120 ns Reverse Recovery Charge ––– 280 420 nC showing the integral reverse p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V TJ = 25°C, IF = 11A di/dt = 100A/µs e e Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 1.62mH, RG = 25Ω, IAS = 11A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 „ Rθ is measured at TJ of approximately 90°C. … Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive avalanche information. www.irf.com IRFB4020PbF 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 1 0.1 5.0V 10 BOTTOM VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 5.0V 1 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 175°C Tj = 25°C 0.1 0.01 0.1 1 10 0.1 100 100 3.5 VDS = 25V ≤60µs PULSE WIDTH T J = 175°C 10 1 T J = 25°C ID = 11A VGS = 10V 3.0 2.5 (Normalized) RDS(on) , Drain-to-Source On Resistance 100 ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.0 1.5 1.0 0.5 0.0 0.1 2 3 4 5 6 7 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 10000 Fig 4. Normalized On-Resistance vs. Temperature 12.0 VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Crss = C gd VGS, Gate-to-Source Voltage (V) ID= 11A Coss = C ds + C gd Ciss 1000 -60 -40 -20 0 20 40 60 80 100120140160180 8 VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Coss 100 Crss 10.0 VDS= 160V VDS= 100V VDS= 40V 8.0 6.0 4.0 2.0 0.0 10 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 5 10 15 20 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFB4020PbF 1000 T J = 175°C 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 1 100µsec 0.1 Tc = 25°C Tj = 175°C Single Pulse 0.01 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 10msec 0.001 1.2 1 10 VSD, Source-to-Drain Voltage (V) 100 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 20 5.0 VGS(th) , Gate Threshold Voltage (V) 18 16 ID, Drain Current (A) 1msec DC 14 12 10 8 6 4 2 0 4.0 ID = 100µA 3.0 2.0 1.0 25 50 75 100 125 150 175 -75 -50 -25 0 T J , Junction Temperature (°C) 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Junction Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 τJ 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τC τ τ2 τ1 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri Ri (°C/W) τi (sec) 0.0283 0.000007 0.3659 0.000140 0.7264 0.001376 0.3093 0.007391 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com 300 400 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFB4020PbF ID = 11A 275 250 225 T J = 125°C 200 175 150 125 100 T J = 25°C 75 50 ID TOP 1.6A 2.4A BOTTOM 11A 300 200 100 0 5 6 7 8 9 10 11 12 13 14 15 16 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.01 10 0.05 0.10 1 0.1 0.01 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 11A 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 5 IRFB4020PbF V(BR)DSS 15V D.U.T RG VGS 20V DRIVER L VDS tp + V - DD IAS tp A 0.01Ω I AS Fig 16a. Unclamped Inductive Test Circuit LD Fig 16b. Unclamped Inductive Waveforms VDS VDS 90% + VDD - 10% D.U.T VGS VGS Pulse Width < 1µs Duty Factor < 0.1% td(on) Fig 17a. Switching Time Test Circuit tr td(off) tf Fig 17b. Switching Time Waveforms Id Vds Vgs L DUT 0 VCC Vgs(th) 1K Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18b Gate Charge Waveform www.irf.com IRFB4020PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/