MMDT5401

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100μA , Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IE=0 IB=0 IC=0 Min Typ Max Unit -160 V -150 V -5 V Collector cut-off current ICBO VCB=-120 V , IE=0 -0.05 μA Emitter cut-off current IEBO VEB=-3V , -0.05 μA hFE(1) VCE=-5 V, IC= -1mA 50 hFE(2) VCE=-5 V, IC= -10mA 100 hFE(3) VCE=-5 V, IC= -50mA 50 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IC=0 300 VCE(sat)1 IC=-10 mA, IB=-1mA -0.2 V VCE(sat)2 IC=-50 mA, IB=-5mA -0.5 V VBE(sat)1 IC= -10 mA, IB=-1mA -1 V VBE(sat)2 IC= -50 mA, IB=-5mA -1 V Transition frequency fT VCE= -10V, IC= -10mA,f = 100MHz Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz Noise Figure NF VCE= -5.0V, IC= -200μA, 100 MHz 6 pF 8.0 dB RS= 10Ω,f = 1.0kHz www.cj-elec.com 1 C,Jul,2015 Typical Characteristics hFE Static Characteristic COMMON EMITTER Ta=25℃ (mA) -16 IC -14 -0.08mA -12 -0.07mA -10 -0.06mA -8 -0.05mA DC CURRENT GAIN hFE -0.09mA -0.04mA -6 -0.02mA -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VBEsat -1000 —— -6 -7 VCE 250 200 Ta=100℃ 150 Ta=25℃ 50 IB=-0.01mA -0 300 100 -0.03mA -4 -2 0 -0.4 -8 VCEsat IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=100℃ -400 -200 -1 -10 -100 COLLECTOR CURRENT IC -200 (mA) IC (mA) IC (mA) -600 IC —— IC -10 -1 Ta=100℃ -0.1 Ta=25℃ -0.01 -200 -1 VBE fT 1000 -600 TRANSITION FREQUENCY -800 -1000 Ta=25℃ 100 10 —— COLLECTOR CURRENT VCB/ VEB PC 250 100 COLLECTOR POWER DISSIPATION PC (mW) f=1MHz IE=0/IC=0 Ta=25℃ C (pF) Cib 10 Cob -1 REVERSE VOLTAGE -10 V -70 -10 BASE-EMMITER VOLTAGE VBE (mV) Cob/ Cib IC —— 1 -1 -1200 -200 COMMON EMITTER VCE= -10V (MHz) fT (mA) IC Ta=25℃ -1 -400 -100 COLLECTOR CURRENT -10 Ta=100℃ -10 (mA) COMMON EMITTER VCE=-5V www.cj-elec.com —— IC β=10 Ta=25℃ 1 -0.1 -100 -100 -600 -0.1 -200 -10 COLLECTOR CURRENT -800 -100 -1 (V) β=10 COLLECTOR CURRENT IC COMMON EMITTER VCE=-5V 350 -0.1mA COLLECTOR CURRENT -18 CAPACITANCE —— 400 -20 —— Ta 200 150 100 50 0 -35 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) C,Jul,2015 SOT-363 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-363 Suggested Pad Layout www.cj-elec.com 3 C,Jul,2015 SOT-363 Tape and Reel www.cj-elec.com 4 C,Jul,2015