NVB110N65S3F

MOSFET – Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A NVB110N65S3F Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 650 V 110 mW @ 10 V 30 A D Features • • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 93 mW Ultra Low Gate Charge (Typ. Qg = 58 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 533 pF) 100% Avalanche Tested Qualified with AEC−Q101 These Devices are Pb−Free and are RoHS Compliant Typical Applications G S N−CHANNEL MOSFET D G • Automotive On Board Charger • Automotive DC/DC Converter for HEV S D2PAK−3 TO−263 CASE 418AJ MARKING DIAGRAM &Z&3&K NVB 110N65S3F &Z &3 &K NVB110N65S3F = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2018 November, 2020 − Rev. 5 1 Publication Order Number: NVB110N65S3F/D NVB110N65S3F Table 1. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) Parameter Symbol VDSS Drain−to−Source Voltage VGS Gate−to−Source Voltage ID Drain Current IDM Drain Current EAS Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 30 − Continuous (TC = 100°C) 19.5 69 A Single Pulse Avalanche Energy (Note 2) 380 mJ IAS Avalanche Current 3.5 A EAR Repeated Avalanche Energy (Note 1) 2.4 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD TJ, Tstg TL − Pulsed (Note 1) A Power Dissipation TC = 25°C 240 W − Derate Above 25°C 1.92 W/°C −55 to 150 °C 300 °C Operating Junction and Storage Temperature Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse*width limited by maximum junction temperature. 2. IAS = 3.5 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/_s, VDD ≤ 400 V, starting TC = 25°C. Table 2. THERMAL RESISTANCE RATINGS Symbol Parameter RqJC Thermal Resistance, Junction−to−Case, Max. RqJA Thermal Resistance, Junction−to−Ambient, Max. Max Unit 0.52 °C/W 40 www.onsemi.com 2 NVB110N65S3F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25°C 650 − − V VGS = 0 V, ID = 10 mA, TJ = 150°C 700 − − V OFF CHARACTERISTICS BVDSS DBVDSS/DTJ IDSS IGSS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 20 mA, Referenced to 25°C − 0.61 − V/°C Zero Gate Voltage Drain Current VDS = 650 V, VDS = 0 V − − 10 mA VDS = 520 V, TC = 125°C − 128 − mA VGS = 0 V, ID = 1 mA, TJ = 25°C − − ±100 nA 3.0 − 5.0 V Gate−to−Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.74 mA RDS(on) Static Drain−to−Source On Resistance VGS = 10 V, ID = 15 A − 93 110 mW Forward Transconductance VGS = 20 V, ID = 15 A − 17 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 2560 − pF − 50 − pF pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 to 400 V, VGS = 0 V − 553 − Coss(er.) Energy Related Output Capacitance VDS = 0 to 400 V, VGS = 0 V − 83 − pF Qg(total) Total Gate Charge at 10 V VDS = 400 V, ID = 15 A, VGS = 10 V (Note 4) − 58 − nC − 19 − nC − 23 − nC F = 1 MHz − 2 − W VDD = 400 V, ID = 15 A, VGS = 10 V, RG = 4.7 W (Note 4) − 29 − ns − 32 − ns Turn-Off Delay Time − 61 − ns Fall Time − 16 − ns Maximum Continuous Source−to−Drain Diode Forward Current − − 30 A ISM Maximum Pulsed Source−to−Drain Diode Forward Current − − 69 A VSD Qgs Gate−to−Source Gate Charge Qgd Gate−to−Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS, VGS = 10 V td(on) tr td(off) tf Turn-On Delay Time Rise Time SOURCE−DRAIN DIODE CHARACTERISTICS IS Source−to−Drain Diode Forward Voltage VGS = 0 V, ISD = 15 A − − 1.3 V trr Reverse−Recovery Time − 94 − ns Qrr Reverse−Recovery Charge VGS = 0 V, ISD = 15 A, dIF/dt = 100 A/ms − 343 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NVB110N65S3F TYPICAL CHARACTERISTICS 100 250 ms Pulse Test TC = 25°C ID, DRAIN CURRENT (A) 8.0 V 7.0 V 6.5 V 10 6.0 V 5.5 V 1 0.1 1 10 ID, DRAIN CURRENT (A) 10 6.0 V 5.5 V 0.2 Figure 2. On−Region Characteristics 1505C TJ = 25°C TJ = 150°C 3 4 TJ = −55°C 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.3 0.2 VGS = 10 V 0.1 0 VGS = 20 V 0 10 20 30 40 50 60 Figure 4. On−Resistance Variation vs. Drain Current and Gate Voltage 100K VGS = 0 V 10K CAPACITANCE (pF) 10 TJ = 150°C 1 TJ = 25°C 0.1 0.01 Ciss 1K 100 TJ = −55°C 0.5 1.0 1.5 10 0.1 2.0 Coss VGS = 0 V f = 1 MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0 70 ID, DRAIN CURRENT (A) Figure 3. Transfer Characteristics IS, REVERSE DRAIN CURRENT (A) 20 Figure 1. On−Region Characteristics 255C 10 0.001 2 VDS, DRAIN−SOURCE VOLTAGE (V) VDS = 20 V 250 ms Pulse Test 2 6.5 V VDS, DRAIN−SOURCE VOLTAGE (V) 100 1 8.0 V 7.0 V 1 20 VGS = 10 V 250 ms Pulse Test TC = 150°C VGS = 10 V RDS(on), DRAIN−SOURCE ON−RESISTANCE (mW) ID, DRAIN CURRENT (A) 100 0.1 1 10 100 VSD, BODY DIODE FORWARD VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Capacitance Characteristics www.onsemi.com 4 1K NVB110N65S3F TYPICAL CHARACTERISTICS VDS = 130 V ID = 15 A 9 BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized) VGS, GATE−SOURCE VOLTAGE (V) 10 8 7 VDS = 400 V 6 5 4 3 2 1 0 0 10 20 30 40 50 60 1.1 1.0 0.9 0.8 −75 −25 25 75 125 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs. Temperature 100 ID = 15 A VGS = 10 V 2.5 ID, DRAIN CURRENT (A) RDS(on), DRAIN−SOURCE ON−RESISTANCE (Normalized) VGS = 0 V ID = 10 mA QG, TOTAL GATE CHARGE (nC) 3.0 2.0 1.5 1.0 0.5 0 −75 −25 25 75 125 100 ms 10 RDS(on) Limit 1 ms 10 ms 1 TC = 25°C RqJC = 0.52°C/W Single Pulse 0.1 175 1 100 ms/DC 10 100 1000 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. On−Resistance Variation vs. Temperature Figure 10. Maximum Safe Operating Area 40 15.0 12.5 30 10.0 EOSS (mJ) ID, DRAIN CURRENT (A) 1.2 20 7.5 5.0 10 2.5 0 25 50 75 100 125 0 150 0 100 200 300 400 500 600 TC, CASE TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Drain Current vs. Case Temperature Figure 12. EOSS vs. Drain−to−Source Voltage www.onsemi.com 5 NVB110N65S3F TYPICAL CHARACTERISTICS 1000 IDM, PEAK CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 RDS(on), ON−RESISTANCE (mW) 0.0001 0.001 0.01 0.1 1 t, RECTANGULAR PULSE Figure 13. Normalized Power Dissipation vs. Case Temperature Figure 14. Peak Current Capability ID = 15 A 300 TA = 150°C 200 TA = 25°C 100 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (Normalized) Current Limited Max TC, CASE TEMPERATURE (°C) 400 0 100 10 0.00001 150 GATE THRESHOLD VOLTAGE (Normalized) POWER DISSIPATION MULTIPLIER 1.2 6 7 8 9 10 10 1.2 ID = 3 mA 1.1 1.0 0.9 0.8 0.7 0.6 −75 −25 25 75 125 175 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 15. RDS(on) vs. Gate Voltage Figure 16. Normalized Gate Threshold Voltage vs. Temperature 10 1 0.1 0.01 0.001 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 P DM 0.01 t1 Single Pulse 0.00001 t2 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 17. Transient Thermal Response www.onsemi.com 6 Notes: ZqJC (t) = r(t) x RqJC RqJC = 0.4°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.1 1 NVB110N65S3F PACKAGE MARKING AND ORDERING INFORMATION Part Number NVB110N65S3F Top Marking Package NVB110N65S3F D2PAK Packing Method Tape & Reel† Reel Size Tape Width Quantity 330 mm 24 mm 800 Units †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. 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