RU8205C6

RU8205C6 N-Channel Advanced Power MOSFET Features Pin Description • 20V/6A, G2 RDS (ON) =18mΩ(Typ.)@VGS=4.5V D1/D2 RDS (ON) =23mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G1 S2 D1/D2 Dual N-Channel MOSFET S1 SOT23-6 D1 Applications D2 • Power Management G1 G2 S1 S2 Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 1.7 A TA=25°C 24 A TA=25°C 6 TA=70°C 4.5 TA=25°C 1.25 TA=70°C 0.75 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation IDP RqJC RqJA ③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 100 °C/W TBD mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 1 www.ruichips.com RU8205C6 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU8205C6 Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) VGS=0V, IDS=250µA V VDS=20V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±10V, VDS=0V Drain-Source On-state Resistance 20 30 0.5 0.7 µA 1.5 V ±100 nA VGS=4.5V, IDS=6A 18 22 mΩ VGS=2.5V, IDS=5A 23 28 mΩ 1 V Diode Characteristics VSD ⑤ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=1A, VGS=0V ISD=1A, dlSD/dt=100A/µs 15 ns 8 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.5 Ciss Input Capacitance VGS=0V, 590 Coss Output Capacitance 125 Crss Reverse Transfer Capacitance VDS=10V, Frequency=1.0MHz td(ON) Turn-on Delay Time tr Turn-on Rise Time VDD=10V, IDS=6A, 15 td(OFF) Turn-off Delay Time VGEN=4.5V,RG=6Ω 33 tf ns 13 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 90 8 Turn-off Fall Time Gate Charge Characteristics pF VDS=16V, VGS=4.5V, IDS=6A 10 1.6 nC 3.4 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 2 www.ruichips.com RU8205C6 Ordering and Marking Information Device Marking Package RU8205C6 RU8205A SOT23-6 Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 Packaging Quantity Reel Size Tape width Tape&Reel 3 3000 7’’ 8mm www.ruichips.com RU8205C6 Typical Characteristics VGS=4.5V RDS(ON) limited Ids=6A 10µs 100µs 1ms 10ms DC TA=25°C Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse Single Pulse RθJA=100°C/W Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 4 www.ruichips.com RU8205C6 Typical Characteristics 4V 4.5V 3V 2.5V 2.5V 2V 4.5V 1.5V VGS=4.5V IDS=6A TJ=150°C TJ=25°C TJ=25°C Rds(on)=18mΩ VDS=16V IDS=6A Frequency=1.0MHz Ciss Coss Crss Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 5 www.ruichips.com RU8205C6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 6 www.ruichips.com RU8205C6 Package Information SOT23-6 θ Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 7 www.ruichips.com