2PG402

IGBTs 2PG402 Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package unit: mm 6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1 q For flash-light for use in a camera 2.3± 0.1 0.2max. 5.5± 0.1 7.3± 0.1 9.8± 0.1 1.0± 0.2 s Applications s Absolute Maximum Ratings (TC = 25°C) Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 ±8 5 130 10 1 150 −55 to +150 Unit V V A A W °C °C 2.5± 0.1 2.5± 0.1 0.85± 0.1 4.6± 0.1 0.75± 0.1 0.5± 0.1 0.05 to 0.15 1.0± 0.1 2.3± 0.1 1 2 3 Marking 1: Emitter 2: Collector 3: Gate U Type Package s Electrical Characteristics (TC = 25°C) Parameter Collector to emitter cut-off current Gate to emitter leakage current Collector to emitter breakdown voltage Gate threshold voltage Collector to emitter saturation voltage Input capacitance (Common Emitter) Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time Symbol ICES IGES VCES VGE(th) VCE(sat) Cies td(on) tr td(off) tf VCC = 300V, IC = 130A VGE = 5V, Rg = 25Ω Conditions VCE = 320V, VGE = 0 VGE = ±8V, VCE = 0 IC = 1mA, VGE = 0 VCE = 10V, IC = 1mA VGE = 5V, IC = 5A VGE = 5V, IC = 130A VCE = 10V, VGE = 0, f = 1MHz 1930 130 1.4 350 1.5 400 0.5 1.5 2 10 min typ max 10 ±1 Unit µA µA V V V pF ns µs ns µs 1 IGBTs IC  VCE Collector to emitter saturation voltage VCE(sat) (V) 200 TC=25˚C 10 VGE=5V TC=25˚C 2PG402 VCE(sat)  IC 200 IC  VGE VCE=10V TC=25˚C Collector current IC (A) 3 VGE=8V 120 5V 4V Collector current IC (A) 10 100 1000 160 160 120 1 Ta=0˚C 80 3V 100˚C 0.3 25˚C 80 40 2V 40 0 0 4 8 12 16 20 24 0.1 0.01 0 0.1 1 0 2 4 6 8 10 12 Collector to emitter voltage VCE (V) Collector current IC (A) Gate to emitter voltage VGE (V) Cies, Coes, Cres  VCE Input capacitance (Common emitter), Output capacitance (Common emitter), Reverse transfer capacitance (Common emitter) Cies,Coes,Cres (pF) 10000 15 PC  Ta Collector power dissipation PC (W) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (1) 9 f=1MHz TC=25˚C Cies 12 1000 100 Coes 6 (2) 3 (3) 0 10 Cres 1 0 100 200 300 400 0 25 50 75 100 125 150 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 2