2SA0885

Power Transistors 2SA0885 (2SA885) ( 2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 I Features • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −45 −35 −5 −1.5 −1 1.2 *1 0.75±0.1 0.5±0.1 0.5±0.1 1.76±0.1 2.3±0.2 3 Unit V V V A A W °C °C 4.6±0.2 16.0±1.0 1 2 1: Emitter 2: Collector 3: Base TO-126B Package 5 *2 Junction temperature Storage temperature 150 −55 to +150 Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink I Electrical Characteristics TC = 25°C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio IEBO VCBO VCEO hFE1 * Conditions VCB = −20 V, IE = 0 VCE = −20 V, IB = 0 VEB = −5V, IC = 0 IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCE = −10 V, IC = −500 mA VCE = −5 V, IC = −1 A IC = −500 mA, IB = −50 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min Typ Max − 0.1 −100 −10 −45 −35 85 50 − 0.5 200 20 30 340 3.05±0.1 Unit µA µA µA V V hFE2 Collector to emitter saturation voltage Transition frequency Collector output capacitance Note) *: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 VCE(sat) fT Cob V MHz pF S 170 to 340 Note.) The Part number in the Parenthesis shows conventional part number. 1 2SA0885 PC  T a 6 Power Transistors IC  VCE –1.5 TC=25˚C –1.25 IB=–10mA –9mA –8mA –7mA –6mA –0.75 –5mA –0.5 –4mA –3mA –0.25 –2mA –1mA –1.0 –1.2 VCE=–10V TC=25˚C IC  I B Collector power dissipation PC (W) 5 (1)With a 100×100×2mm Al heat sink (2)Without heat sink 4 (1) 3 –1.0 Collector current IC (mA) Collector current IC (A) –0.8 –0.6 2 (2) –0.4 1 –0.2 0 0 20 40 60 80 100 120 140 160 180 200 0 0 –2 –4 –6 –8 –10 0 0 –2 –4 –6 –8 –10 –12 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat)  IC Collector to emitter saturation voltage VCE(sat) (V) –10 VBE(sat)  IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –10 IC/IB=10 1000 hFE  IC VCE=–10V TC=100˚C 300 25˚C –3 –3 Forward current transfer ratio hFE –1 –1 TC=–25˚C 100˚C 100 –25˚C –0.3 25˚C –0.1 TC=100˚C –25˚C –0.3 25˚C 30 –0.1 10 –0.03 –0.03 3 –0.01 –0.01 –0.03 –0.1 –0.3 –1 –0.01 –0.01 –0.03 –0.1 –0.3 –1 1 –0.01 –0.03 –0.1 –0.3 –1 Collector current IC (A) Collector current IC (A) Collector current IC (A) f T  IE 200 50 Cob  VCB –100 VCER  RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz TC=25˚C IC=–10mA TC=25˚C Collector output capacitance Cob (pF) Transition frequency fT (MHz) VCB=–10V 180 f=200MHz TC=25˚C 160 140 120 100 80 60 40 20 0 1 3 10 30 100 45 40 35 30 25 20 15 10 5 0 –1 –80 –60 –40 –20 –3 –10 –30 –100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) 2 Power Transistors ICEO  Ta 104 VCE=–10V –10 –3 ICP 103 2SA0885 Area of safe operation (ASO) Single pulse TC=25˚C Collector current IC (A) –1 –0.3 IC t=10ms t=1s ICEO (Ta) ICEO (Ta=25˚C) 102 –0.1 –0.03 –0.01 –0.003 10 1 0 20 40 60 80 100 120 140 160 –0.001 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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