2SA1035

Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1034 and 2SA1035 Unit: mm s Features q q q 2.9 –0.05 Parameter Collector to base voltage Collector to 2SC2405 2SC2406 2SC2405 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 35 55 35 55 5 100 50 200 150 –55 ~ +150 Unit +0.2 1.1 –0.1 2 V emitter voltage 2SC2406 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : S(2SC2405) T(2SC2406) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC2405 2SC2406 2SC2405 2SC2406 (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) VBE fT NV Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 5V, IE = –2mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA VCB = 5V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 0.7 200 110 35 55 35 55 5 180 700 0.6 1 V V MHz mV min typ max 100 1 Unit nA µA V 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 0.16 –0.06 +0.1 0.4 –0.05 +0.1 s Absolute Maximum Ratings 1.9±0.2 Low noise voltage NV. High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 0.95 1 +0.2 0.95 3 1.45 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage *h FE Rank classification Rank hFE R 180 ~ 360 SR TR S 260 ~ 520 SS TS T 360 ~ 700 ST TT Marking Symbol 2SC2405 2SC2406 1 Transistor PC — Ta 250 160 140 2SC2405, 2SC2406 IC — VCE Ta=25˚C 160 VCE=5V Ta=25˚C 140 IC — I B Collector power dissipation PC (mW) 225 Collector current IC (mA) 120 100 Collector current IC (mA) 200 175 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 IB=350µA 300µA 250µA 120 100 80 60 40 20 0 80 60 40 02 0 0 2 4 6 8 200µA 150µA 100µA 50µA 10 12 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) IC — VBE Collector to emitter saturation voltage VCE(sat) (V) 120 25˚C 100 VCE=5V 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) — IC IC/IB=10 1000 900 800 700 600 500 400 300 200 100 0 0.1 hFE — IC VCE=5V Collector current IC (mA) Ta=75˚C 80 –25˚C 60 Forward current transfer ratio hFE Ta=75˚C 25˚C –25˚C 40 25˚C Ta=75˚C 20 –25˚C 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT — IE 500 450 Cob — VCB Collector output capacitance Cob (pF) VCB=5V Ta=25˚C 10 9 8 7 6 5 4 3 2 1 0 0.1 IE=0 f=1MHz Ta=25˚C 160 140 NV — VCE IC=1mA GV=80dB Function=FLAT Rg=100kΩ 100 80 60 40 20 0 22kΩ 4.7kΩ Transition frequency fT (MHz) Noise voltage NV (mV) 0.3 1 3 10 30 100 400 350 300 250 200 150 100 50 0 – 0.1 – 0.3 120 –1 –3 –10 –30 –100 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Transistor NV — VCE 300 Rg=100kΩ 160 140 VCE=10V GV=80dB Function=FLAT 2SC2405, 2SC2406 NV — IC 300 VCE=10V GV=80dB Function=RIAA NV — IC Noise voltage NV (mV) Noise voltage NV (mV) IC=1mA GV=80dB Function=RIAA 180 120 100 80 60 22kΩ 40 20 0 0.01 4.7kΩ Rg=100kΩ Noise voltage NV (mV) 240 240 180 120 22kΩ 60 4.7kΩ 120 Rg=100kΩ 60 22kΩ 4.7kΩ 0 1 3 10 30 100 0.03 0.1 0.3 1 0 0.01 0.03 0.1 0.3 1 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) NV — Rg 160 140 VCE=10V GV=80dB Function=FLAT 300 NV — Rg VCE=10V GV=80dB Function=RIAA Noise voltage NV (mV) 120 100 80 IC=1mA 60 40 20 0 1 3 10 30 100 0.5mA 0.1mA Noise voltage NV (mV) 240 180 IC=1mA 120 0.5mA 60 0.1mA 0 1 3 10 30 100 Signal source resistance Rg (kΩ) Signal source resistance Rg (kΩ) 3