2SA1096

Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A VEBO ICP IC PC Tj Tstg Symbol VCBO VCEO Rating 70 50 60 5 3 1.5 1.2 *1 5 *2 Junction temperature Storage temperature 150 −55 to +150 °C °C V A A W Unit V V 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 16.0±1.0 Emitter to base voltage Peak collector current Collector current Collector power dissipation 1 : Emitter 2 : Collector 3 : Base TO-126B-A1 Package Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink I Electrical Characteristics TC = 25°C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A hFE VCE(sat) VBE(sat) fT Cob VCE = 5 V, IC = 1 A IC = 1.5 A, IB = 0.15 A IC = 1.5 A, IB = 0.15 A VCB = 5 V, IE = − 0.5 A, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz 150 35 IEBO VCBO VCEO Conditions VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IC = 0 IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 70 50 60 80 220 1 1.5 V V MHz pF Min Typ Max 1 100 10 Unit µA µA µA V V Forward current transfer ratio * Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Note) *: Rank classification Rank hFE R 80 to 160 S 120 to 220 188 3.05±0.1 Power Transistors PC  T a 6 2SC2497, 2SC2497A IC  VCE Collector to emitter saturation voltage VCE(sat) (V) 4.0 TC=25˚C 3.5 10 VCE(sat)  IC IC/IB=10 Collector power dissipation PC (W) 5 (1)With a 100×100×2mm Al heat sink (2)Without heat sink Collector current IC (A) 3.0 2.5 2.0 1.5 1.0 0.5 IB=50mA 45mA 40mA 35mA 30mA 25mA 20mA 15mA 10mA 5mA 3 4 (1) 3 1 0.3 25˚C TC=100˚C –25˚C 2 0.1 1 (2) 0.03 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat)  IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 10 1000 hFE  IC 240 VCE=5V fT  I E VCB=5V f=200MHz TC=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) 1 3 200 3 TC=–25˚C 100˚C 0.3 25˚C 300 TC=100˚C 100 –25˚C 30 25˚C 160 1 120 0.1 10 80 0.03 3 40 0.01 0.01 0.03 0.1 0.3 1 3 1 0.01 0.03 0.1 0.3 0 –0.01 –0.03 –0.1 –0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob  VCB 240 VCER  RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz TC=25˚C 100 90 80 103 IC=10mA TC=25˚C 104 ICBO  Ta VCB=40V Collector output capacitance Cob (pF) 200 60 50 40 30 ICBO (Ta) ICBO (Ta=25˚C) 0.3 1 3 10 30 100 160 70 120 102 80 10 20 10 0 0.1 1 0 20 40 60 80 100 120 140 160 180 40 0 1 3 10 30 100 Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) Ambient temperature Ta (˚C) 189 2SC2497, 2SC2497A Area of safe operation (ASO) 10 3 ICP IC t=1s Single pulse TC=25˚C t=10ms Power Transistors Collector current IC (A) 1 0.3 0.1 0.03 0.01 0.003 0.001 0.1 0.3 1 3 10 30 Collector to emitter voltage VCE (V) 190 2SC2497A 100 2SC2497 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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