2SA1123

Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 5.0±0.2 5.1±0.2 Unit: mm 4.0±0.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 150 150 5 100 50 750 150 –55 ~ +150 Unit V V 123 2.3±0.2 13.5±0.5 Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 V mA mA mW ˚C ˚C 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob NV * Conditions VCB = 100V, IE = 0 IC = 0.1mA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max 1 Unit µA V V 150 5 130 330 1 160 3 150 300 VCE(sat) V MHz pF mV *h FE Rank classification R 130 ~ 220 S 185 ~ 330 hFE Rank 1 Transistor PC — Ta 1.0 120 VCE=10V 25˚C 2SC2631 IC — VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) Collector current IC (mA) 0.8 100 Ta=75˚C 80 –25˚C 0.6 60 0.4 40 0.2 20 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Base to emitter voltage VBE (V) Collector current IC (mA) hFE — IC 600 VCE=10V 300 fT — I E Collector output capacitance Cob (pF) VCB=10V f=100MHz Ta=25˚C 5 Cob — VCB IE=0 f=1MHz Ta=25˚C 4 Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 250 400 200 3 300 Ta=75˚C 25˚C –25˚C 150 2 200 100 100 50 1 0 0.1 0.3 1 3 10 30 100 0 –1 0 –3 –10 –30 –100 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2