2SA1310

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 55 7 200 100 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE * Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 2mA IC = 100mA, IB = 10mA VCE = 1V, IC = 30mA VCB = 5V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max 0.1 1 2.0±0.2 marking +0.2 0.45–0.1 s Absolute Maximum Ratings (Ta=25˚C) 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Unit µA µA V V V 60 55 7 180 700 1 1 200 150 VCE(sat) VBE fT NV V V MHz mV *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 1 Transistor PC — Ta 500 240 Ta=25˚C 200 100 Ta=75˚C 2SC3312 IC — VCE 120 25˚C –25˚C VCE=5V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 IB=400µA 120 350µA 330µA 250µA 200µA 150µA 40 100µA 50µA Collector current IC (mA) 400 80 300 60 200 80 40 100 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C –25˚C IC/IB=10 1000 hFE — IC 400 VCE=5V fT — I E VCB=5V Ta=25˚C Forward current transfer ratio hFE 800 Transition frequency fT (MHz) 10 30 100 350 300 250 200 150 100 50 600 Ta=75˚C 400 25˚C –25˚C 200 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 5 240 IE=0 f=1MHz Ta=25˚C NV — IC ICE=10V GV=80dB Function=FLAT Ta=25˚C Collector output capacitance Cob (pF) Noise voltage NV (mV) 4 200 160 3 120 Rg=100kΩ 2 80 22kΩ 40 4.1kΩ 1 0 1 3 10 30 100 0 0.01 0.03 0.1 0.3 1 Collector to base voltage VCB (V) Collector current IC (mA) 2