2SA1323

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q q Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking +0.2 0.45–0.1 15.6±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 30 20 5 30 300 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Common emitter reverse transfer capacitance Reverse transfer impedance (Ta=25˚C) Symbol VCBO VCEO VEBO hFE * Conditions IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 1mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA VCB = 10V, IE = –1mA, f = 200MHz VCB = 10V, IE = –1mA, f = 5MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = –1mA, f = 2MHz min 30 20 5 70 typ max 2.0±0.2 Unit V V V 220 0.1 0.7 V V MHz 4.0 1.5 50 dB pF Ω VCE(sat) VBE fT NF Cre Zrb 150 300 2.8 *h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC — Ta 500 240 Ta=25˚C 200 50 2SC3314 IC — VCE 60 VCE=10V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 400 160 IB=100µA 80µA 80 60µA 40µA 40 20µA 40 Ta=75˚C 30 25˚C 300 –25˚C 120 200 20 100 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.1 25˚C –25˚C IC/IB=10 240 hFE — IC 800 VCE=10V fT — I E Ta=25˚C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 700 600 500 400 300 200 100 VCE=10V 6V 160 Ta=75˚C 25˚C 120 –25˚C 80 40 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Zrb — IE Reverse transfer impedance Zrb (Ω) VCB=10V f=2MHz Ta=25˚C Cre — VCE Common emitter reverse transfer capacitance Cre (pF) 3.0 f=10.7MHz Ta=25˚C 2.5 20 24 VCE=10V f=100MHz Ta=25˚C PG — IE 60 50 40 2.0 1mA 1.5 IC=3mA Power gain PG (dB) 10 30 100 16 30 12 20 1.0 8 10 0.5 4 0 – 0.1 – 0.3 –1 –3 –10 0 0.1 0.3 1 3 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Emitter current IE (mA) Collector to emitter voltage VCE (V) Emitter current IE (mA) 2 Transistor NF — IE 12 5 2SC3314 Cob — VCB Collector output capacitance Cob (pF) VCB=6V f=100MHz Rg=50Ω Ta=25˚C IE=0 f=1MHz Ta=25˚C 4 10 Noise figure NF (dB) 8 3 6 2 4 2 1 0 – 0.1 0 – 0.3 –1 –3 –10 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) 3