2SA1534

Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A 5.0±0.2 4.0±0.2 Unit: mm s Features q q Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertion possible. (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 Unit V Parameter Collector to base voltage Collector to 2SA1534 2SA1534A 2SA1534 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.45 –0.1 +0.15 13.5±0.5 s Absolute Maximum Ratings 0.7±0.1 0.7±0.2 8.0±0.2 0.45 –0.1 +0.15 emitter voltage 2SA1534A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V A A W ˚C ˚C 123 2.54±0.15 2.3±0.2 V 1.27 1.27 1:Emitter 2:Collector 3:Base TO–92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SA1534 2SA1534A 2SA1534 2SA1534A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –500mA VCE = –5V, IC = –1A IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –5 85 50 – 0.2 – 0.85 200 20 30 – 0.4 –1.2 V V MHz pF 340 min typ max – 0.1 Unit µA V V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 1.2 –1.5 Ta=25˚C 2SA1534, 2SA1534A IC — VCE –1.2 VCE=–10V Ta=25˚C –1.0 IC — IB Collector power dissipation PC (W) 1.0 –1.25 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA Collector current IC (A) 0.8 –1.0 0.6 – 0.75 0.4 – 0.5 0.2 – 0.25 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 Collector current IC (A) – 0.8 – 0.6 – 0.4 – 0.2 0 0 –2 –4 –6 –8 –10 –12 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –100 –30 –10 –3 –1 Ta=–25˚C 75˚C 25˚C IC/IB=10 –600 hFE — IC VCE=–10V Forward current transfer ratio hFE –500 –400 Ta=75˚C –300 25˚C –25˚C – 0.3 – 0.1 – 0.03 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –200 –100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 –1 –3 –10 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT — IE 200 180 Cob — VCB 50 –120 VCER — RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25˚C IC=–10mA Ta=25˚C Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –1 Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 1 3 10 30 100 –100 –80 –60 2SA1534A –40 2SA1534 –20 –3 –10 –30 –100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) 2 Transistor ICEO — Ta 104 VCE=–10V –10 –3 103 2SA1534, 2SA1534A Area of safe operation (ASO) Single pulse Ta=25˚C ICP t=10ms IC t=1s Collector current IC (A) –1 ICEO (Ta) ICEO (Ta=25˚C) – 0.3 – 0.1 – 0.03 102 – 0.003 1 0 20 40 60 80 100 120 140 160 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 2SA1534 10 – 0.01 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 2SA1534A –100 3