Transistor
2SA1739
Silicon PNP epitaxial planer type
For high speed switching
Unit: mm
2.1±0.1
s Features
q q q
0.425
1.25±0.1
0.425
High-speed switch (pair with 2SC3938) Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.9±0.1
–15 –15 –4 –100 –50 150 150 –55 ~ +150
V V V mA mA mW ˚C ˚C
0.7±0.1
Ratings
Unit
0 to 0.1
0.2±0.1
1:Base 2:Emitter 3:Collector
EIAJ:SC–70 S–Mini Type Package
Marking symbol :
AX
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time
(Ta=25˚C)
Symbol ICBO IEBO hFE1* hFE2 VCE(sat) fT Cob ton toff tstg Conditions VCB = –8V, IE = 0 VEB = –3V, IC = 0 VCE = –1V, IC = –10mA VCE = –1V, IC = –1mA IC = –10mA, IB = –1mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –5V, IE = 0, f = 1MHz (Note 1) Next page (Note 1) Next page (Note 1) Next page 800 50 30 – 0.1 1500 1 12 20 19 – 0.2 V MHz pF ns ns ns min typ max – 0.1 – 0.1 150 Unit µA µA
*h
FE1
Rank classification
Q 50 ~ 120 R 90 ~ 150
Rank hFE1
0.15–0.05
+0.1
0.3–0
+0.1
1
Transistor
Switching time measurement circuit ton, toff Test Circuit
VBB 2kΩ 0.1µF Vin 51Ω 52Ω VCC=–1.5V 62Ω Vout
2SA1739
PC — Ta tstg Test Circuit
VBB=–10V 508Ω 0.1µF Vin 51Ω 34Ω VCC=–3V 30Ω Vout
240
Collector power dissipation PC (mW)
200
160
120
Vin Vout
0
10% 90% 90% 10%
Vin Vout
0 90% 90% toff Vin=9.0V
80
40
ton toff Vin=–5.8V Vin=9.8V VBB=Ground VBB=–8.0V
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
–60 Ta=25˚C –50 IB=–600µA –500µA –40 –400µA –300µA –30 –200µA –20 –100µA –10 –100 –30 –10 –3 –1
VCE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 –100 –30 –10 –3 –1
VBE(sat) — IC
IC/IB=10
Collector current IC (mA)
Ta=75˚C 25˚C –25˚C
Ta=–25˚C 25˚C 75˚C
– 0.3 – 0.1 – 0.03 – 0.01 –1
– 0.3 – 0.1 – 0.03 – 0.01 –1
0 0 –2 –4 –6 –8 –10 –12
–3
–10
–30
–100 –300 –1000
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
hFE — IC
240 VCE=–10V 2400
fT — IE
Collector output capacitance Cob (pF)
VCB=–10V f=200MHz Ta=25˚C 2.4
Cob — VCB
IE=0 f=1MHz Ta=25˚C
Forward current transfer ratio hFE
200
Transition frequency fT (MHz)
2000
2.0
160
1600
1.6
120 Ta=75˚C 80 25˚C 40 –25˚C
1200
1.2
800
0.8
400
0.4
0 – 0.1 –0.3
0 –1 –3 –10 –30 –100 1 3 10 30 100
0 –1
–3
–10
–30
–100
Collector current IC (mA)
Emitter current IE (mA)
Collector to base voltage VCB (V)
2
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