2SA1748

Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4562 2.1±0.1 Unit: mm s Features q q q 0.425 1.25±0.1 0.425 High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –50 –50 –5 –50 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : AL s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –2mA IC = –10mA, IB = –1mA VCB = –10V, IE = 2mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –50 –50 –5 200 – 0.1 250 1.5 500 – 0.3 V MHz pF min typ max – 0.1 –100 Unit µA µA V V V *h FE Rank classification Rank hFE Marking Symbol Q 200 ~ 400 ALQ R 250 ~ 500 ALR 0.15–0.05 +0.1 s Absolute Maximum Ratings (Ta=25˚C) 0.2 0.3–0 +0.1 1 Transistor PC — Ta 240 –120 Ta=25˚C 200 –100 –50 2SA1748 IC — VCE –60 VCE=–10V 25˚C Ta=75˚C –40 –25˚C IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 –80 IB=–300µA –250µA 120 –60 Collector current IC (mA) –200µA –150µA –30 80 –40 –100µA –20 –50µA –20 40 –10 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C IC/IB=10 600 hFE — IC 600 VCE=–10V fT — IE VCB=–10V Ta=25˚C Forward current transfer ratio hFE 500 Ta=75˚C 400 25˚C –25˚C 300 Transition frequency fT (MHz) –3 –10 –30 –100 500 400 300 – 0.3 – 0.1 – 0.03 – 0.01 –1 200 200 100 100 –3 –10 –30 –100 –300 –1000 0 – 0.1 – 0.3 –1 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 6 Collector output capacitance Cob (pF) 5 IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2