2SA1762

Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC4606 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q q 1.5 R0.9 R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.4 1.0±0.1 R 0. 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –80 –80 –5 –1 – 0.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 0.55±0.1 1.25±0.05 0.45±0.05 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2 1 2.5 2.5 EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –300mA, IB = –30mA IC = –300mA, IB = –30mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1 MHz –80 –80 –5 130 50 100 – 0.2 – 0.85 85 11 20 – 0.4 –1.2 V V MHz pF 330 min typ max – 0.1 Unit µA V V V *h FE1 Rank classification R 130 ~ 220 S 185 ~ 330 Rank hFE1 4.1±0.2 4.5±0.1 7 1 Transistor PC — Ta 1.2 –1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C –1.0 IB=–10mA –1.0 2SA1762 IC — VCE –1.2 VCE=–10V Ta=25˚C IC — IB Collector power dissipation PC (W) 1.0 Collector current IC (A) 0.8 – 0.8 –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA 0.6 – 0.6 0.4 – 0.4 0.2 – 0.2 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 Collector current IC (A) –9mA – 0.8 – 0.6 – 0.4 – 0.2 0 0 –2 –4 –6 –8 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –10 –30 –10 –3 –1 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –100 –30 –10 –3 –1 Ta=–25˚C 75˚C IC/IB=10 300 hFE — IC VCE=–10V Forward current transfer ratio hFE 250 200 Ta=75˚C 25˚C Ta=75˚C 25˚C 150 –25˚C 100 – 0.3 – 0.1 – 0.03 – 0.01 –1 – 0.3 – 0.1 – 0.03 – 0.01 –1 50 –3 –10 –30 –100 –300 –1000 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) fT — IE 120 Cob — VCB Collector output capacitance Cob (pF) VCB=–10V f=200MHz Ta=25˚C 60 IE=0 f=1MHz Ta=25˚C 104 ICBO — Ta VCB=–20V Transition frequency fT (MHz) 100 50 103 40 80 ICBO (Ta) ICBO (Ta=25˚C) –3 –10 –30 –100 60 30 102 40 20 10 10 20 0 1 3 10 30 100 300 1000 0 –1 1 0 60 120 180 Emitter current IE (mA) Collector to base voltage VCB (V) Ambient temperature Ta (˚C) 2 Transistor ICEO — Ta 105 VCE=–10V –10 –3 2SA1762 Area of safe operation (ASO) Single pulse Ta=25˚C Collector current IC (A) 104 –1 ICP IC t=10ms ICEO (Ta) ICEO (Ta=25˚C) 103 – 0.3 t=1s – 0.1 – 0.03 – 0.01 102 10 – 0.003 1 0 20 40 60 80 100 120 140 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 3