2SA1767

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 5.0±0.2 4.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC1473 2SC1473A 2SC1473 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) Ratings 250 300 200 300 7 100 70 750 150 –55 ~ +150 Unit V 0.45 –0.1 1.27 +0.2 13.5±0.5 High collector to emitter voltage VCEO. High transition frequency fT. 5.1±0.2 0.45 –0.1 1.27 +0.2 emitter voltage 2SC1473A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 2.3±0.2 123 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SC1473 2SC1473A 2SC1473 2SC1473A (Ta=25˚C) Symbol ICEO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCE = 120V, IB = 0 VCE = 120V, IB = 0 IC = 100µA, IC = 0 IE = 1µA, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 10 200 300 7 30 220 1.2 V MHz pF min typ max 1 1 Unit µA V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE Rank 1 Transistor PC — Ta 1.0 120 2SC1473, 2SC1473A IC — VCE 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 80 0.8mA 0.6mA 0.4mA 40 0.2mA 20 120 Ta=25˚C IB=2mA 100 25˚C VCE=10V IC — VBE Collector power dissipation PC (W) 0.9 Collector current IC (mA) Collector current IC (mA) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 100 Ta=75˚C 80 –25˚C 60 60 40 20 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC — IB Collector to emitter saturation voltage VCE(sat) (V) 120 VCE=10V Ta=25˚C 100 100 30 VCE(sat) — IC IC/IB=10 3.0 IB — VBE VCE=10V Ta=25˚C 2.5 Collector current IC (mA) 80 Base current IB (mA) 100 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C Ta=75˚C 2.0 60 1.5 40 1.0 –25˚C 20 0.5 0 0 0.4 0.8 1.2 1.6 2.0 0 0.3 1 3 10 30 0 0.2 0.4 0.6 0.8 1.0 Base current IB (mA) Collector current IC (mA) Base to emitter voltage VBE (V) hFE — IC 360 VCE=10V 160 fT — I E 10 Cob — VCB Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 9 8 7 6 5 4 3 2 1 0 IE=0 f=1MHz Ta=25˚C Forward current transfer ratio hFE 300 Transition frequency fT (MHz) 30 100 140 120 100 80 60 40 20 240 180 Ta=75˚C 25˚C 120 –25˚C 60 0 0.1 0.3 1 3 10 0 –1 –3 –10 –30 –100 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor ICBO — Ta 104 VCB=250V 104 2SC1473, 2SC1473A IEBO — Ta VEB=5V Area of safe operation (ASO) 1000 300 Single pulse Ta=25˚C Collector current IC (mA) 103 103 100 30 10 3 1 0.3 ICP IC DC t=1ms t=10ms ICBO (Ta) ICBO (Ta=25˚C) 102 IEBO (Ta) IEBO (Ta=25˚C) 102 1 0 40 80 120 160 200 1 0 40 80 120 160 200 0.1 1 3 10 30 100 300 1000 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 2SC1473A 10 10 2SC1473 3