2SA1806

Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit: mm 1.6±0.15 s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 High-speed switching. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –15 –15 –4 –100 –50 125 125 –55 ~ +125 Unit V V V mA mA mW ˚C ˚C 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : AK s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25˚C) Symbol ICBO IEBO hFE1 hFE2 VCE(sat) fT Cob ton toff tstg * Conditions VCB = –8V, IE = 0 VEB = –3V, IC = 0 VCE = –1V, IC = –10mA VCE = –1V, IC = –1mA IC = –10mA, IB = – 1mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –5V, IE = 0, f = 1MHz (Note 1) Next page (Note 1) Next page (Note 1) Next page min typ 0 to 0.1 0.2±0.1 max – 0.1 – 0.1 +0.1 s Absolute Maximum Ratings Unit µA µA 50 30 – 0.1 800 1500 1 12 20 19 150 – 0.2 V MHz pF ns ns ns *h FE1 Rank classification Rank hFE1 Q 50 ~ 120 AKQ R 90 ~ 150 AKR Marking Symbol 1 Transistor Switching time measurement circuit ton, toff Test Circuit VBB 2kΩ 0.1µF Vin 51Ω 52Ω VCC=–1.5V 62Ω Vout 2SA1806 PC — Ta tstg Test Circuit VBB=–10V 508Ω 0.1µF Vin 51Ω 34Ω VCC=–3V 30Ω Vout 150 Collector power dissipation PC (mW) 125 100 75 Vin Vout 0 10% 90% 90% 10% Vin Vout 0 90% 90% toff Vin=9.0V 50 25 ton toff Vin=–5.8V Vin=9.8V VBB=Ground VBB=–8.0V 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –60 Ta=25˚C –50 IB=–600µA –500µA –40 –400µA –300µA –30 –200µA –20 –100µA –10 –100 –30 –10 –3 –1 VCE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –100 –30 –10 –3 –1 VBE(sat) — IC IC/IB=10 Collector current IC (mA) Ta=75˚C 25˚C –25˚C Ta=–25˚C 25˚C 75˚C – 0.3 – 0.1 – 0.03 – 0.01 –1 – 0.3 – 0.1 – 0.03 – 0.01 –1 0 0 –2 –4 –6 –8 –10 –12 –3 –10 –30 –100 –300 –1000 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE — IC 240 VCE=–10V 2400 fT — IE Collector output capacitance Cob (pF) VCB=–10V f=200MHz Ta=25˚C 2.4 Cob — VCB IE=0 f=1MHz Ta=25˚C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 2000 2.0 160 1600 1.6 120 Ta=75˚C 80 25˚C 40 –25˚C 1200 1.2 800 0.8 400 0.4 0 – 0.1 – 0.3 0 –1 –3 –10 –30 –100 1 3 10 30 100 0 –1 –3 –10 –30 –100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2