2SA1890

Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q 1.0–0.2 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 0.4max. 45° +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25˚C) Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings –80 –80 –5 –1.5 –1 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package marking Marking symbol : 1Z Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = –40V, IE = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –100mA VCE = –2V, IC = –500mA*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max – 0.1 –80 –80 –5 120 60 – 0.2 – 0.85 120 15 *2 2.5±0.1 +0.25 Unit µA V V V 340 – 0.3 –1.2 V V MHz 30 pF Pulse measurement *1h FE1 Rank classification Q 120 ~ 240 R 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 1.2 –1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C –1.0 2SA1890 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) 1.0 0.8 Collector current IC (A) IB=–8mA –7mA –6mA –5mA –4mA –3mA –2mA – 0.8 0.6 – 0.6 0.4 – 0.4 –1mA – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0.2 – 0.2 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=–25˚C 25˚C –75˚C IC/IB=10 300 hFE — IC 200 VCE=–2V 180 250 Ta=75˚C 25˚C 150 –25˚C 100 fT — IE VCB=–10V Ta=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) –1 –3 –10 160 140 120 100 80 60 40 20 200 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 50 –1 –3 –10 0 – 0.01 – 0.03 – 0.1 – 0.3 0 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 12 Collector output capacitance Cob (pF) 10 IE=0 f=1MHz Ta=25˚C 8 6 4 2 0 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) 2