2SA1982

Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC5346 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 0.7 4.0 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier. (Ta=25˚C) Ratings –150 –150 –5 –100 –50 * 0.65 max. 1.0 1.0 0.2 0.45–0.05 +0.1 +0.1 2.5±0.5 2.5±0.5 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Unit V V V mA mA W ˚C ˚C 0.45+0.1 – 0.05 1.2±0.1 0.65 max. Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1 150 –55~+150 Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2.5±0.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCEO VEBO hFE*1 VCE(sat) NV fT Cob Conditions VCB = –100V, IE = 0 IC = –0.1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz 150 200 5 –150 –5 130 330 –1 300 V mV MHz pF min typ max –1 Unit µA V V *1h FE Rank classification R 130 ~ 220 S 185 ~ 330 Rank hFE 14.5±0.5 1 Transistor PC — Ta 2.0 –90 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C –75 2SA1982 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –10 –3 –1 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) Collector current IC (mA) 1.6 –60 – 0.6mA – 0.5mA – 0.9mA – 0.8mA – 0.7mA IB=–1.0mA 1.2 – 0.3 – 0.1 – 0.03 – 0.01 –45 – 0.4mA – 0.3mA – 0.2mA 0.8 –30 – 0.1mA –15 0.4 – 0.003 – 0.001 –1 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 –3 –10 –30 –100 –300 –1000 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE — IC 300 6 Cob — VCB Collector output capacitance Cob (pF) VCE=–5V f=1MHz IE=0 Ta=25˚C Forward current transfer ratio hFE 250 Ta=75˚C 200 25˚C 5 4 150 –25˚C 3 100 2 50 1 0 –1 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 Collector current IC (mA) Collector to base voltage VCB (V) 2