2SA2004

Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High-speed switching 15.0±0.5 I Features φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 2 5 ° C Ta = 2 5 ° C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −60 −60 −5 −16 −8 20 2.0 150 −55 to +150 °C °C Unit V V V A A W 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package Junction temperature Storage temperature I Electrical Characteristics TC = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO ICEO Collector to emitter voltage Forward current transfer ratio VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn-on time Storage time Fall time VCE(sat) VBE(sat) ton tstg tf Conditions VCB = −60 V, IE = 0 VCE = −60 V, IE = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −5 A IC = −5 A, IB = − 0.25 A IC = −5 A, IC = − 0.25 A IC = −4 A, IB1 = −400 mA IB2 = 400 mA, VCC = 50 V 0.2 0.1 0.5 −60 100 30 −1.2 −1.7 0.5 0.15 1.0 V V µs µs µs 230 Min Typ Max −100 −100 Unit µA µA V 1