2SA2009

Transistors 2SA2009 Silicon PNP epitaxial planer type Unit: mm (0.425) For low-frequency high breakdown voltage amplification I Features • High collector to emitter voltage VCEO • Low noise voltage NV 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 (0.65) (0.65) I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −120 −120 −5 −50 −20 150 150 −55 to +150 Unit V V V mA mA mW °C °C 10˚ 1.3±0.1 2.0±0.2 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S Mini Type Package (3-pin) Marking Symbol: AR I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Noise voltage Transition frequency Note) *: Rank classification Rank hFE R 180 to 360 S 260 to 520 T 360 to 700 * Conditions VCB = −50 V, IE = 0 VCE = −50 V, IB = 0 IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −5 V, IC = −2 mA IC = −20 mA, IB = −2 mA VCE = −40 V, IC = −1 mA, GV = 80 dB Rg = 100 kW, Function = FLAT VCB = −5 V, IE = 2 mA, f = 200 MHz Min Typ 0 to 0.1 0.9±0.1 0.9+0.2 –0.1 Max −100 −1 Unit nA µA V V V VCBO VCEO VEBO hFE VCE(sat) NV fT −120 −120 −5 180 130 120 700 − 0.6 Collector to emitter saturation voltage V mV MHz 1