2SA2010

Transistors 2SA2010 Silicon PNP epitaxial planer type Unit: mm For DC-DC converter For various driver circuits I Features • Low collector to emitter saturation voltage VCE(sat) , large current capacitance • High-speed switching • Mini type 3-pin package, allowing downsizing and thinning of the equipment. • Complementary pair with 2SC5592 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 (0.65) I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −15 − 15 −5 −10 − 2.5 600 150 −55 to +150 Unit V V V A A mW °C °C Marking Symbol: AS Note) *: Measure on the ceramic substrate at 15 × 15 × 0.6 mm3. I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) Cob fT ton tstg toff Conditions VCB = −10 V, IE = 0 IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −2 V, IC = −100 mA VCE = −2 V, IC = −2.5 A IC = −1 A, IB = −10 mA IC = −2.5 A, IB = −50 mA Collector output capacitance Transition frequency Turn-on time *2 Storage time *2 Turn-off time *2 VCB = 10 V, IE = 0, f = 1 MHz VCB = −10 V, IE = 50 mA f = 200 MHz −15 −15 −5 200 100 − 140 − 270 40 180 35 110 10 −320 mV mV pF MHz ns ns ns 560 Min Typ Max − 0.1 Unit µA V V V Note) *1: Rank classification *2: Reference to the measurement circuit. 0 to 0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini Type Package (3-pin) 1.1+0.3 –0.1 0.4±0.2 5° 1 2SA2010 I Measurement Circuit Transistors Input RB IB2 IB1 Output RL 470 µF VCC = −5 V PW = 20 µs DC ≤ 1% −201B1 = 201B2 = IC = −1.5 A 2