2SA2046

Transistors 2SA2046 Silicon PNP epitaxial planer type Unit: mm 0.40+0.10 −0.05 3 0.65±0.15 For DC-DC converter 1.45 0.16+0.10 −0.06 • Low collector to emitter saturation voltage VCE(sat) • Mini3-G1 type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 1.50+0.25 −0.05 +0.20 2.80−0.30 I Features 1 0.95 2 0.95 1.90±0.20 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 2.90+0.20 −0.05 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −30 −20 −5 −5 −1.5 400 150 −55 to +150 mm3 Unit V V V A A mW °C °C 10° 0 ∼ 0.1 1.10+0.20 −0.10 0.65±0.15 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Type Package Marking Symbol: 3Z Note) *: Measure on the ceramic substrate at 15 × 15 × 0.6 I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio * Collector to emitter saturation voltage * Collector output capacitance Transition frequency Note) *: Pulse measurement Symbol VCBO VCEO VEBO hFE VCE(sat) Cob fT Conditions IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, , IC = 0 VCE = −2 V, IC = −100 mA IC = −500 mA, IB = −25 mA VCB = −10 V, IE = 0, f = 1 MHz VCB = −10 V, IE = 20 mA f = 200 MHz Min −30 −20 −5 160 − 50 25 170 560 −150 35 mV pF MHz Typ Max Unit V V V 1.10+0.30 −0.10 5° 0.40±0.20 1