2SA2079

Transistors 2SA2079 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5848  Features  High forward current transfer ratio hFE  Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package Package: 0.6 mm × 1.0 mm (hight 0.39 mm) 3 2 Unit: mm 1 1.00±0.05 0.60±0.05 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1  Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating –45 –45 –7 –100 –200 100 125 –55 to +125 Unit V V V mA mA mW °C °C 1: Base 2: Emitter 3: Collector 3 0.65±0.01 2 0.05±0.03 ML3-N2 Package Marking Symbol : 3D  Electrical Characteristics Ta = 25°C±3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cut-off current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = –10 µA, IE = 0 IC = –2 mA, IB = 0 IE = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –10 V, IB = 0 VCE = –10 V, IC = –2 mA IC = –100 mA, IB = –10 mA VCB = –10 V, IE = 1 mA, f = 200 MHz VCB = –10 V, IE = 0, f = 1 MHz 180 – 0.2 80 2.2 Min –45 –45 –7 – 0.1 –100 390 – 0.5 Typ Max Unit V V V µA µA  V MHz pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date : December 2004 SJC00326AED 1 2SA2079 2SA2162_ PC-Ta PC  Ta 2SA2079_IC-VCE IC  VCE 2SA2079_IC-IB IC  IB 120 −60 −50 −40 Ta = 25°C Ta = −300 µA −250 µA −200 µA −140 −120 Collector power dissipation PC (mW) Collector current IC (mA) 100 80 60 40 20 0 VCE = −10 V Ta = 25°C Collector current IC (mA) −100 −80 −60 −40 −20 0 −30 −20 −10 0 −150 µA −100 µA −50 µA 0 −2 −4 −6 −8 −10 −12 0 20 40 60 80 100 120 140 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Ambient temperature Ta (°C) 2SA2079_IB-VBE Collector-emitter voltage VCE 2SA2079_IC-VBE (V) Base current IB (mA) 2SA2079_VCE(sat)-IC IB  VBE IC  VBE VCE(sat)  IC −3.0 VCE = −10 V Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −3.5 −120 VCE = −10 V −100 −1 IC / IB = 10 V Collector current IC (mA) Base current IB (mA) −2.5 −2.0 −1.5 −1.0 − 0.5 0 0 −80 −60 −40 −20 0 Ta = 75°C −25°C 25°C − 0.1 Ta = 75°C −25°C 25°C − 0.2 − 0.4 − 0.6 − 0.8 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 − 0.01 −1 −10 −100 Base-emitter voltage VBE (V) 2SA2079_hFE-IC Base-emitter voltage VBE (V) 2SA2079_Cob-VCB Collector current IC (mA) hFE  IC Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25°C 300 250 200 −25°C 150 100 50 0 −1 Ta = 75°C 25°C VCE = −10 V Forward current transfer ratio hFE −10 −100 −1000 1 0 −8 −16 −24 −32 −40 Collector current IC (mA) Collector-base voltage VCB (V) 2 SJC00326AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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