2SA2118

Power Transistors 2SA2118 Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with one screw. Unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 3.0±0.5 2.6±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 2 5 °C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −200 −180 −6 −2 −3 25 2.0 150 −55 to +150 °C °C Unit V V V A A W Solder Dip 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCBO VCEO VEBO VBE ICBO IEBO hFE1 * Conditions IC = −50 µA, IE = 0 IC = −5 mA, IB = 0 IE = −500 µA, IC = 0 VCE = −10 V, IC = −400 mA VCB = −200 V, IE = 0 VEB = −4 V, IC = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −400 mA IC = −500 mA, IB = −50 mA VCE = −10 V, IC = − 0.5 A, f = 10 MHz Min −200 −180 −6 Typ Max Unit V V V −1 −50 −50 60 50 −1 30 240 V µA µA  V MHz hFE2 Collector-emitter saturation voltage Transition frequency VCE(sat) fT Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 60 to 140 P 100 to 240 Publication date: July 2004 SJD00315AED 1 2SA2118 PC  Ta 35 10 Safe operation area Non repetitive pulse, TC = 25°C ICP IC Collector power dissipation PC (W) 30 25 (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink Collector current IC (A) (1) 20 15 (2) 10 5 (3) 0 1 t = 0.5 m 0.1 t = 1 ms t = 5 ms t=1s 0.01 0 20 40 60 80 100 120 140 160 1 10 100 1 000 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) 2 SJD00315AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP