2SA684

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 −1 −1.5 1 150 −55 to +150 V A A W °C °C V Unit V 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 5.9±0.2 4.9±0.2 0.45+0.2 –0.1 (1.27) 123 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 2.54±0.15 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SA0683 2SA0684 2SA0683 2SA0684 VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −10 V, IC = −500 mA VCE = −5 V, IC = −1 A IC = −500 mA, IB = −50 mA IC = −500 mA, IB = −50 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 85 50 − 0.2 − 0.85 200 20 30 − 0.4 −1.20 V V MHz pF VCEO IC = −2 mA, IB = 0 Symbol VCBO Conditions IC = −10 µA, IE = 0 Min −30 −60 −25 −50 −5 − 0.1 340 V µA  V Typ Max Unit V Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE Q 85 to 170 R 120 to 240 S 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2004 SJC00001CED (3.2) Collector-emitter voltage 2SA0683 (Base open) 2SA0684 1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package 1 2SA0683, 2SA0684 PC  Ta 1.2 −1.5 IC  VCE Ta = 25°C IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA −1.2 VCE = −10 V Ta = 25°C IC  I B Collector power dissipation PC (W) 1.0 −1.25 −1.0 0.8 −1.0 0.6 − 0.75 0.4 − 0.50 0.2 − 0.25 Collector current IC (mA) Collector current IC (A) − 0.8 − 0.6 − 0.4 − 0.2 0 0 0 40 80 120 160 0 −2 −4 −6 −8 −10 0 0 −2 −4 −6 −8 −10 −12 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −100 VBE(sat)  IC −100 hFE  IC 600 VCE = −10 V Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 −10 −10 Forward current transfer ratio hFE 500 400 Ta = 75°C 300 25°C 200 −25°C −1 Ta = 75°C 25°C −25°C −1 Ta = −25°C 75°C 25°C − 0.1 − 0.1 100 − 0.01 − 0.01 − 0.1 −1 −10 − 0.01 − 0.01 − 0.1 −1 −10 0 − 0.01 − 0.1 −1 −10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT  I E Collector output capacitance C (pF) (Common base, input open circuited) ob 200 VCB = −10 V Ta = 25°C Cob  VCB 50 VCER  RBE Collector-emitter voltage (V) (Resistor between B and E) VCER IE = 0 f = 1 MHz Ta = 25°C −120 IC = −10 mA Ta = 25°C Transition frequency fT (MHz) 160 40 −100 −80 120 30 −60 2SA0684 80 20 −40 2SA0683 40 10 −20 0 1 10 100 0 −1 −10 −100 0 0.1 1 10 100 Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (kΩ) 2 SJC00001CED 2SA0683, 2SA0684 ICEO  Ta 104 VCE = −10 V −10 Safe operation area Single pulse Ta = 25°C ICP t = 10 ms Collector current IC (A) 103 −1 IC t=1s ICEO (Ta) ICEO (Ta = 25°C) 102 −10−1 2SA0683 1 0 40 80 120 160 −10−3 − 0.1 −1 −10 2SA0684 10 −10−2 −100 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) SJC00001CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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