2SA720A

Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –80 –70 –5 –1 – 0.5 625 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 13.5±0.5 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 123 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 50mA, f = 100MHz VCB = –10V, IE = 0, f = 1MHz min typ max – 0.1 Unit µA V V V –80 –70 –5 85 40 – 0.2 – 0.85 120 20 *2 240 – 0.6 –1.5 V V MHz 30 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 Rank hFE1 1 Transistor PC — Ta 800 –1.2 Ta=25˚C 700 –1.0 IB=–10mA –1.0 2SA720A IC — VCE –1.2 VCE=–10V Ta=25˚C IC — IB Collector power dissipation PC (mW) Collector current IC (A) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 – 0.8 –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA – 0.6 – 0.4 – 0.2 0 0 –2 –4 –6 –8 –10 Collector current IC (A) –9mA – 0.8 – 0.6 – 0.4 – 0.2 0 0 –2 –4 –6 –8 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –10 –3 –1 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –100 –30 –10 –3 –1 Ta=–25˚C 75˚C IC/IB=10 300 hFE — IC VCE=–10V Forward current transfer ratio hFE 250 200 Ta=75˚C 25˚C – 0.3 – 0.1 – 0.03 – 0.01 25˚C Ta=75˚C 25˚C 150 –25˚C 100 –25˚C – 0.3 – 0.1 – 0.03 – 0.01 –1 50 – 0.003 – 0.001 –1 –3 –10 –30 –100 –300 –1000 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Collector current IC (A) Collector current IC (mA) fT — IE 200 180 Cob — VCB Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C 50 45 40 103 IE=0 f=1MHz Ta=25˚C 104 ICBO — Ta VCB=–20V Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 1 3 10 30 100 30 25 20 15 ICBO (Ta) ICBO (Ta=25˚C) –3 –10 –30 –100 35 102 10 10 5 0 –1 1 0 60 120 180 Emitter current IE (mA) Collector to base voltage VCB (V) Ambient temperature Ta (˚C) 2