2SA777

Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA777 5.9± 0.2 Unit: mm 4.9± 0.2 q q 2.54± 0.15 (Ta=25˚C) Ratings 80 80 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 0.45–0.1 1.27 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.5± 0.5 s Absolute Maximum Ratings 0.7–0.2 +0.3 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7± 0.1 8.6± 0.2 s Features 0.45–0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz 80 80 5 130 50 100 0.2 0.85 120 11 *2 min 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package typ max 0.1 Unit µA V V V 330 0.4 1.2 V V MHz 20 pF Pulse measurement *1h FE1 Rank classification R 130 ~ 220 S 185 ~ 330 Rank hFE1 1 Transistor PC — Ta 1.2 1.2 Ta=25˚C IB=10mA 8mA 7mA 6mA 5mA 0.6 4mA 3mA 0.4 2mA 0.2 1mA 2SC1509 IC — VCE 1.2 VCE=10V Ta=25˚C 1.0 IC — I B Collector power dissipation PC (W) 1.0 1.0 Collector current IC (A) 0.8 0.8 Collector current IC (A) 9mA 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25˚C 1 75˚C 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=–25˚C IC/IB=10 300 hFE — IC VCE=10V Forward current transfer ratio hFE 250 Ta=75˚C 25˚C 150 –25˚C 200 100 50 0 1 3 10 30 100 300 1000 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) fT — IE 200 180 Cob — VCB Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 50 45 40 103 IE=0 f=1MHz Ta=25˚C 104 ICBO — Ta VCB=20V Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 –1 30 25 20 15 ICBO (Ta) ICBO (Ta=25˚C) 1 3 10 30 100 35 102 10 10 5 0 1 0 60 120 180 –3 –10 –30 –100 Emitter current IE (mA) Collector to base voltage VCB (V) Ambient temperature Ta (˚C) 2 Transistor ICEO — Ta 105 VCE=10V 10 3 2SC1509 Area of safe operation (ASO) Single pulse Ta=25˚C Collector current IC (A) 104 1 0.3 ICP IC t=10ms ICEO (Ta) ICEO (Ta=25˚C) 103 DC 0.1 0.03 0.01 0.003 t=1s 102 10 1 0 20 40 60 80 100 120 140 0.001 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 3