2SA838

Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q High transition frequency fT. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings –30 –20 –5 –30 250 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 123 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25˚C) Symbol ICBO ICEO IEBO hFE* VCE(sat) VBE fT NF Zrb Cre Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 VEB = –5V, IC = 0 VCE = –10V, IC = –1mA IC = –10mA, IB = –1mA VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 1mA, f = 5MHz VCE = –10V, IC = –1mA, f = 2MHz VCE = –10V, IC = –1mA, f = 10.7MHz 150 70 – 0.1 – 0.7 300 2.8 22 1.2 4.0 50 2.0 min typ max – 0.1 –100 –10 220 V V MHz dB Ω pF Unit µA µA *h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC — Ta 500 –30 Ta=25˚C 450 –25 2SA838 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (mW) 350 300 250 200 150 100 50 0 0 40 80 120 160 200 Collector current IC (mA) 400 –20 IB=–250µA –200µA –15 –150µA –100µA –50µA –10 – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 –25˚C –5 0 0 –2 –4 –6 –8 –10 –1 –3 –10 –30 –100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE — IC –120 6 Cob — VCB Collector output capacitance Cob (pF) VCE=–10V f=1MHz IE=0 Ta=25˚C Cre — VCE Common emitter reverse transfer capacitance Cre (pF) 5 IC=–1mA f=10.7MHz Ta=25˚C 4 Forward current transfer ratio hFE –100 Ta=75˚C –80 5 25˚C –25˚C 4 3 –60 3 2 –40 2 –20 1 1 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 Collector current IC (mA) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) fT — IE 600 VCB=–10V Ta=25˚C 24 PG — IC VCE=–10V f=100MHz Ta=25˚C 5 NF — IE VCB=–10V f=100MHz Ta=25˚C 4 Transition frequency fT (MHz) 500 20 400 16 Noise figure NF (dB) –1 –3 –10 –30 –100 Power gain PG (dB) 3 300 12 2 200 8 100 4 1 0 0.1 0.3 1 3 10 30 100 0 – 0.1 – 0.3 0 0.1 0.3 1 3 10 Emitter current IE (mA) Collector current IC (mA) Emitter current IE (mA) 2