2SB0710

Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD0602 and 2SD0602A I Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 Parameter Collector to base voltage Collector to emitter voltage 2SB0710 2SB0710A 2SB0710 2SB0710A Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating − 30 − 60 − 25 − 50 −5 −1 −500 200 150 −55 to +150 Unit V V 1: Base 2: Emitter 3: Collector 0 to 0.1 1.1+0.3 –0.1 I Absolute Maximum Ratings Ta = 25°C (0.65) JEDEC: TO-236 EIAJ: SC-59 Mini Type Package Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V A mA mW °C °C Marking Symbol • 2SB0710 : C • 2SB0710A : D I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Symbol ICBO 2SB0710 2SB0710A 2SB0710 2SB0710A VEBO hFE1 hFE2 *2 Conditions VCB = −20 V, IE = 0 IC = −10 µA, IE = 0 IC = −10 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −500 mA IC = −300 mA, IB = −30 mA IC = −300 mA, IB = −30 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min −30 −60 −25 −50 −5 85 40 Typ Max − 0.1 Unit µA V VCBO VCEO 340 − 0.35 −1.1 200 6 15 − 0.6 −1.5 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Marking symbol 2SB0710 2SB0710A VCE(sat) VBE(sat) fT Cob MHz pF Q 85 to 170 CQ DQ R 120 to 240 CR DR S 170 to 340 CS DS No-rank 85 to 340 C D Product of no-rank is not classified and have no indication for rank. 0.4±0.2 5° V V V V 1 2SB0710, 2SB0710A PC  Ta 240 −1 200 Transistors IC  VCE Ta = 25°C −800 −700 IC  I B VCE = −10 V Ta = 25°C Collector power dissipation PC (mW) 200 −1 000 Collector current IC (mA) 160 −800 IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA 120 −600 80 −400 40 −200 0 0 0 40 80 120 160 Collector current IC (mA) −600 −500 −400 −300 −200 −100 0 −2 −4 −6 −8 −10 0 –2 –4 –6 –8 –10 –12 0 Ambient temperature Ta (°C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat)  IC Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) −10 −3 −1 − 0.3 − 0.1 25°C Ta=75°C −25°C IC / IB = 10 −100 −30 −10 3 −1 VBE(sat)  IC IC / IB = 10 600 hFE  IC VCE = −10 V Forward current transfer ratio hFE 500 400 25°C Ta = −25°C 75°C 300 Ta = 75°C 200 25°C −25°C − 0.03 − 0.01 − 0.3 − 0.1 − 0.003 − 0.001 −1 −3 −10 −30 −100 −300 −1 000 − 0.03 − 0.01 −1 −3 −10 −30 −100 −300 −1 000 100 0 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 −10 Collector current IC (mA) Collector current IC (mA) Collector current IC (A) fT  I E 240 24 Cob  VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) VCB = −10 V Ta = 25°C IE = 0 f = 1 MHz Ta = 25°C −120 VCER  RBE IC = −2 mA Ta = 25°C Transition frequency fT (MHz) 200 20 −100 160 16 −80 120 12 −60 2SB0710A −40 2SB0710 −20 80 8 40 4 0 1 2 3 5 10 20 30 50 100 0 −1 −2 −3 −5 −10 −20−30 −50 −100 0 1 3 10 30 100 300 1 000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) 2