2SB0710A

Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) ■ Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Unit: mm 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 1 2 (0.65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SB0710 2SB0710A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 − 0.5 −1 200 150 −55 to +150 V A A mW °C °C V Unit V 10˚ (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 Collector-emitter voltage 2SB0710 (Base open) 2SB0710A 1.1+0.3 –0.1 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: • 2SB0710: C • 2SB0710A: D ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0710 2SB0710A 2SB0710 2SB0710A VEBO ICBO hFE1 *2 Symbol VCBO VCEO Conditions IC = −10 µA, IE = 0 IC = −10 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −500 mA IC = −300 mA, IB = −30 mA IC = −300 mA, IB = −30 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min −30 −60 −25 −50 −5 Typ 0 to 0.1 Max Unit V V Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 V − 0.1 µA   − 0.35 − 0.60 −1.1 200 6 15 −1.5 V V MHz pF 85 40 340 hFE2 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) *1 VCE(sat) VBE(sat) fT Cob Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Product of no-rank is not Rank Q R S No-rank classified and have no hFE1 85 to 170 120 to 240 170 to 340 85 to 340 marking symbol for rank. 2SB0710 CQ CR CS C Marking symbol 2SB0710A DQ DR DS D Note) The part numbers in the parenthesis show conventional part number. Publication date: May 2003 SJC00048CED 0.4±0.2 5˚ 1 2SB0710, 2SB0710A PC  Ta 240 −1 200 IC  VCE Ta = 25°C −800 −700 IC  I B VCE = −10 V Ta = 25°C Collector power dissipation PC (mW) 200 −1 000 Collector current IC (mA) 160 −800 IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA 120 −600 80 −400 40 −200 0 0 0 40 80 120 160 Collector current IC (mA) −600 −500 −400 −300 −200 −100 0 −2 −4 −6 −8 −10 0 –2 –4 –6 –8 –10 –12 0 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −10 VBE(sat)  IC −100 hFE  IC 600 VCE = −10 V Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 −1 Ta=75°C −25°C −10 Forward current transfer ratio hFE 500 400 − 0.1 25°C 25°C −1 Ta = −25°C 75°C 300 Ta = 75°C 200 25°C −25°C − 0.01 − 0.1 100 − 0.001 −1 −10 −100 −1 000 − 0.01 −1 −10 −100 −1 000 0 − 0.01 − 0.1 −1 −10 Collector current IC (mA) Collector current IC (mA) Collector current IC (A) fT  I E Collector output capacitance C (pF) (Common base, input open circuited) ob 240 VCB = −10 V Ta = 25°C 24 Cob  VCB Collector-emitter voltage (V) (Resistor between B and E) VCER IE = 0 f = 1 MHz Ta = 25°C −120 VCER  RBE IC = −2 mA Ta = 25°C Transition frequency fT (MHz) 200 20 −100 160 16 −80 120 12 −60 2SB0710A −40 2SB0710 −20 80 8 40 4 0 1 10 100 0 −1 −10 −100 0 1 10 100 1 000 Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (kΩ) 2 SJC00048CED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL