Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO
(Ta=25˚C)
Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 1cm2 Unit V
45°
1.0–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1
4.0–0.20
0.4±0.04
emitter voltage 2SB766A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package
marking
Marking symbol :
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
A(2SB766) B(2SB766A)
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB766 2SB766A 2SB766 2SB766A
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –500mA*2 VCE = –5V, IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –5 85 50 – 0.2 – 0.85 200 20
*2
min
typ
max – 0.1
Unit µA V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
*1h FE1
340
– 0.4 –1.2
MHz 30 pF
Rank classification
Rank hFE1 Q 85 ~ 170 2SB766 2SB766A AQ BQ R 120 ~ 240 AR BR S 170 ~ 340 AS BS
Pulse measurement
Marking Symbol
2.5±0.1
+0.25
Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
4.5±0.1 1.6±0.2
1.5±0.1
V V
V V
1
Transistor
PC — Ta
1.4
2SB766, 2SB766A
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
–1.50 Ta=25˚C –1.25 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C
VCE(sat) — IC
IC/IB=10
Collector power dissipation PC (W)
1.2
Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion.
1.0
Collector current IC (A)
–1.00
0.8
– 0.75
0.6
– 0.50
– 0.3 – 0.1 – 0.03
0.4
0.2
– 0.25
0 0 20 40 60 80 100 120 140 160
0 0 –2 –4 –6 –8 –10
– 0.01 – 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) — IC
–100
hFE — IC
IC/IB=10 600 VCE=–10V 200 180 500 VCB=–10V Ta=25˚C
fT — I E
Base to emitter saturation voltage VBE(sat) (V)
Transition frequency fT (MHz)
–1 –3 –10
–30 –10 –3 25˚C –1 75˚C Ta=–25˚C
Forward current transfer ratio hFE
160 140 120 100 80 60 40 20
400 Ta=75˚C 300 25˚C 200 –25˚C
– 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3
100
–1
–3
–10
0 – 0.01 – 0.03 – 0.1 – 0.3
0 1 3 10 30 100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob — VCB
50
Area of safe operation (ASO)
–10 IE=0 f=1MHz Ta=25˚C –3 ICP Single pulse Ta=25˚C
Collector output capacitance Cob (pF)
45 40 35 30 25 20 15 10 5 0 –1
Collector current IC (A)
–1
IC
t=10ms t=1s
– 0.3 – 0.1 – 0.03 – 0.01
2SB766A 2SB766
– 0.003 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3
–3
–10
–30
–100
–1
–3
–10
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
2
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