2SB0956

Transistor 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm s Features q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0–0.2 +0.1 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –20 –20 –5 –2 –1 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 2.6±0.1 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : H Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –10V, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –500mA*2 VCE = –2V, IC = –1.5A*2 IC = –1A, IB = –50mA*2 IC = –500mA, IB = –50mA VCB = –6V, IE = 50mA, f = 200MHz VCB = –6V, IE = 0, f = 1MHz 200 40 *2 min typ max –1 Unit µA V V –20 –5 130 50 – 0.5 –1.2 280 MHz pF Pulse measurement *1h FE1 Rank classification Rank hFE1 R 130 ~ 210 HR S 180 ~ 280 HS Marking Symbol 2.5±0.1 +0.25 V V 1 Transistor PC — Ta 1.4 2SB956 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –1.2 Ta=25˚C –1.0 –10 –3 –1 25˚C Ta=75˚C VCE(sat) — IC IC/IB=20 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector current IC (A) IB=–5.0mA –4.5mA –4.0mA –3.5mA –3.0mA –2.5mA –2.0mA –1.5mA –1.0mA – 0.5mA 1.0 – 0.8 – 0.3 – 0.1 – 0.03 – 0.01 –25˚C 0.8 – 0.6 0.6 – 0.4 0.4 0.2 – 0.2 – 0.003 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 0 0 20 40 60 80 100 120 140 160 0 0 –1 –2 –3 –4 –5 –6 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –10 hFE — IC IC/IB=10 600 VCE=–2V 500 450 500 fT — I E VCB=–6V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 25˚C –1 Ta=–25˚C 75˚C Transition frequency fT (MHz) –1 –3 –10 –3 Forward current transfer ratio hFE 400 350 300 250 200 150 100 50 400 – 0.3 – 0.1 – 0.03 – 0.01 300 Ta=75˚C 25˚C 200 –25˚C 100 – 0.003 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 0 – 0.01 – 0.03 – 0.1 – 0.3 0 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 120 Area of safe operation (ASO) IE=0 f=1MHz Ta=25˚C 10 3 Single pulse Ta=25˚C ICP t=10ms 1 IC t=1s Collector output capacitance Cob (pF) 100 80 60 40 20 – 0.003 0 –1 – 0.001 – 0.1 – 0.3 –3 –10 –30 –100 Collector current IC (A) – 0.3 – 0.1 – 0.03 – 0.01 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2