2SB1030

Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150 –55 ~ +150 Unit marking +0.2 0.45–0.1 0.7±0.1 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 1.27 1.27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB1030 2SB1030A 2SB1030 2SB1030A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –7 85 40 – 0.35 200 6 *2 min typ max – 0.1 –1 2.0±0.2 Unit µA µA V V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance – 0.6 V MHz 15 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 500 –1200 Ta=25˚C 450 –1000 2SB1030, 2SB1030A IC — VCE –100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 Collector power dissipation PC (mW) –30 –10 –3 –1 Ta=–25˚C 25˚C 75˚C 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 400 –800 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA –600 –400 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –200 0 0 –2 –4 –6 –8 –10 –12 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C IC/IB=10 600 hFE — IC 160 VCE=–10V fT — I E VCB=–10V Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) –1 –3 –10 140 120 100 80 60 40 20 400 300 Ta=75˚C 200 25˚C –25˚C 100 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 0 – 0.01 – 0.03 – 0.1 – 0.3 0 0.1 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 20 240 IE=0 f=1MHz Ta=25˚C NV — IC VCE=–10V Ta=25˚C Function=FLAT Collector output capacitance Cob (pF) 18 16 14 12 10 8 6 4 2 0 –1 200 Noise voltage NV (mV) 160 120 Rg=100kΩ 22kΩ 40 4.7kΩ 80 –3 –10 –30 –100 0 –10 –30 –100 –300 –1000 Collector to base voltage VCB (V) Collector current IC (µA) 2