2SB1050

Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 s Features q q q 1.5 R0.9 R0.9 0.4 2.4±0.2 2.0±0.2 3.5±0.1 0.85 (Ta=25˚C) Ratings –30 –20 –7 –8 –5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO IEBO VCEO VEBO hFE*1 VCE(sat) fT Cob Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A*2 IC = –3A, IB = –0.1A*2 VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz *2 min typ 1.25±0.05 s Absolute Maximum Ratings 0.55±0.1 0.45±0.05 max –100 –100 4.1±0.2 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 4.5±0.1 1.0±0.1 R 0. 7 Unit nA nA V V –20 –7 90 625 –1 120 85 V MHz pF Pulse measurement *1h FE Rank classification P 90 ~ 135 Q 120 ~ 205 R 180 ~ 625 Rank hFE 1 Transistor PC — Ta 1.6 –6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C –5 IB=–50mA –45mA –10 2SB1050 IC — VCE –12 VCE=–2V IC — VBE Collector power dissipation PC (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 Collector current IC (A) Collector current IC (A) –40mA –35mA –30mA –25mA –4 –8 Ta=75˚C –6 25˚C –25˚C –3 –20mA –15mA –2 –10mA –5mA –4 –1 –2 0 40 60 80 100 120 140 160 0 –1 –2 –3 –4 –5 –6 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) hFE — IC Collector to emitter saturation voltage VCE(sat) (V) 600 VCE=–2V –100 –30 –10 –3 –1 VCE(sat) — IC IC/IB=30 240 fT — I E VCB=–6V Ta=25˚C Forward current transfer ratio hFE Ta=75˚C 500 25˚C Transition frequency fT (MHz) –10 200 400 160 300 –25˚C 120 Ta=75˚C 25˚C –25˚C 200 – 0.3 – 0.1 – 0.03 80 100 40 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 300 Collector output capacitance Cob (pF) 250 IE=0 f=1MHz Ta=25˚C 200 150 100 50 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2