2SB1154

Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 21.0±0.5 15.0±0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –130 –80 –7 –20 –10 70 3 150 –55 to +150 Unit V V V 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A VCE = –2V, IC = –6A IC = –6A, IB = – 0.3A IC = –10A, IB = –1A IC = –6A, IB = – 0.3A IC = –10A, IB = –1A VCE = –10V, IC = – 0.5A, f = 10MHz IC = –6A, IB1 = – 0.6A, IB2 = 0.6A, VCC = –50V 30 0.5 1.0 0.2 –80 45 90 30 – 0.5 –1.5 –1.5 –2.5 V V V V MHz µs µs µs 260 min typ max –10 –50 Unit µA µA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 120 –20 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) TC=25˚C IB=–400mA 2SB1154 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –10 VCE(sat) — IC (1) IC/IB=10 (2) IC/IB=20 TC=25˚C Collector power dissipation PC (W) 100 Collector current IC (A) –16 –250mA –200mA –12 –160mA –120mA –100mA –8 –80mA –60mA –40mA –4 –20mA 0 –3 (2) 80 (1) 60 –1 (1) – 0.3 40 – 0.1 20 (3) 0 0 25 (2) – 0.03 50 75 100 125 150 0 –2 –4 –6 –8 –10 –12 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –10 IC/IB=10 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 1000 –30 –10 –3 25˚C –1 TC=–25˚C 100˚C hFE — IC VCE=–2V –3 25˚C –1 Forward current transfer ratio hFE 300 TC=100˚C 25˚C 100 –25˚C 30 – 0.3 TC=100˚C –25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.1 10 – 0.03 3 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 –1 –3 –10 1 – 0.1 – 0.3 –1 –3 –10 –30 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT — IC 1000 300 100 30 10 3 1 0.3 0.1 – 0.01 – 0.03 – 0.1 – 0.3 VCE=–10V f=10MHz TC=25˚C 100 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C tstg ton tf Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C t=1ms 10ms –3 –1 DC Transition frequency fT (MHz) Switching time ton,tstg,tf (µs) 10 3 1 0.3 0.1 0.03 0.01 Collector current IC (A) –8 –10 – 0.3 – 0.1 – 0.03 – 0.01 –1 –1 –3 –10 0 –1 –2 –3 –4 –5 –6 –7 –3 –10 –30 –100 –300 –1000 Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 2SB1154 Thermal resistance Rth(t) (˚C/W) 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3