2SB1207

Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –15 –10 –7 –1 – 0.5 300 150 –55 ~ +150 Unit V V 1 2 3 1.27 1.27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE *1 Conditions VCB = –10V, IE = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –0.5A*2 VCE = –2V, IC = –1A*2 IC = –0.4A, IB = –8mA IC = –0.4A, IB = –8mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max –100 2.0±0.2 marking +0.2 0.45–0.1 s Absolute Maximum Ratings (Ta=25˚C) 15.6±0.5 Low collector to emitter saturation voltage VCE(sat). Optimum for high-density mounting. Allowing supply with the radial taping. Unit nA V V V –15 –10 –7 130 60 – 0.16 – 0.8 130 22 *2 350 hFE2 VCE(sat) VBE(sat) fT Cob – 0.3 –1.2 V V MHz pF Pulse measurement *1h FE1 Rank classification R 130 ~ 220 S 180 ~ 350 Rank hFE1 1 Transistor PC — Ta 500 –1.2 Ta=25˚C 450 –1.0 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA 2SB1207 IC — VCE –100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=50 Collector power dissipation PC (mW) –30 –10 –3 25˚C –1 Ta=–25˚C 75˚C 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (A) 400 – 0.8 – 0.6 – 0.4 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.2 0 0 –1 –2 –3 –4 –5 –6 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C IC/IB=50 600 hFE — IC 200 VCE=–2V 180 500 fT — I E VCB=–10V Ta=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) –1 –3 –10 160 140 120 100 80 60 40 20 400 Ta=75˚C 25˚C 300 – 0.3 – 0.1 – 0.03 –25˚C 200 100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 0 – 0.01 – 0.03 – 0.1 – 0.3 0 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 80 Collector output capacitance Cob (pF) 70 60 50 40 30 20 10 0 –1 IE=0 f=1MHz Ta=25˚C –3 –10 –30 –100 Collector to base voltage VCB (V) 2