2SB1209

Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 s Features q q q 1.5 R0.9 R0.9 0.4 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 1.0 0.45±0.05 1 1.0±0.1 R 0. 7 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings –400 –400 –5 –200 –100 1 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = –100µA, IE = 0 IC = –500µA, IB = 0 IE = –100µA, IC = 0 VCE = –5V, IC = –30mA IC = –10mA, IB = –1mA IC = –50mA, IB = –5mA VCB = –30V, IE = 20mA, f = 200MHz VCB = –30V, IE = 0, f = 1MHz 50 9 min –400 –400 –5 40 – 0.6 –1.5 V V MHz pF typ max Unit V V V 1.25±0.05 s Absolute Maximum Ratings (Ta=25˚C) 0.55±0.1 4.1±0.2 4.5±0.1 1 Transistor PC — Ta 1.6 –120 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C –100 –100 2SB1209 IC — VCE –120 VCE=–5V 25˚C IC — VBE Collector power dissipation PC (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 Collector current IC (mA) Collector current IC (mA) Ta=75˚C –80 –80 –60 – 0.9mA – 0.8mA – 0.7mA – 0.6mA – 0.5mA – 0.4mA IB=–1mA –60 –40 – 0.3mA – 0.2mA –40 –25˚C –20 –20 – 0.1mA 0 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 TC=75˚C –1 25˚C –25˚C IC/IB=10 240 hFE — IC 120 VCE=–5V fT — I E VCB=–30V TC=25˚C Forward current transfer ratio hFE 200 Ta=75˚C 160 Transition frequency fT (MHz) –10 –30 –100 100 80 120 25˚C 60 – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 –25˚C 80 40 40 20 –1 –3 –10 –30 –100 0 – 0.1 – 0.3 0 –1 –3 1 3 10 30 100 300 1000 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 30 Area of safe operation (ASO) IE=0 f=1MHz Ta=25˚C –1000 –300 Single pulse Ta=25˚C ICP t=100ms IC t=1s –30 –10 –3 –1 t=10ms Collector output capacitance Cob (pF) 25 20 15 10 5 – 0.3 0 1 3 10 30 100 – 0.1 –1 Collector current IC (A) –100 –3 –10 –30 –100 –300 –1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2