Transistors
2SB1219, 2SB1219A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD1820 and 2SD1820A I Features
• Large collector current IC • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
(0.425)
0.3+0.1 –0.0 3
0.15+0.10 –0.05
1.25±0.10
2.1±0.1 5°
1
2
0.2±0.1 0 to 0.1 0.9±0.1 0.9+0.2 –0.1
(0.65) (0.65) 1.3±0.1 2.0±0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage 2SB1219 2SB1219A 2SB1219 2SB1219A VEBO ICP IC PC Tj Tstg VCEO Symbol VCBO Rating − 30 − 60 − 25 − 50 −5 −1 −500 150 150 −55 to +150 V A mA mW °C °C V Unit V
10°
Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
1: Base 2: Emitter 3: Collector
EIAJ: SC-70 S-Mini Type Package
Marking Symbol • 2SB1219 : C • 2SB1219A : D
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio
*1
Symbol ICBO 2SB1219 2SB1219A 2SB1219 2SB1219A VEBO hFE1 hFE2
*2
Conditions VCB = −20 V, IE = 0 IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −500 mA IC = −300 mA, IB = −30 mA IC = −300 mA, IB = −30 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz
Min −30 −60 −25 −50 −5 85 40
Typ
Max − 0.1
Unit µA V
VCBO VCEO
V
V 340 − 0.35 −1.1 200 6 15 − 0.6 −1.5
Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Marking symbol 2SB1219 2SB1219A
VCE(sat) VBE(sat) fT Cob
V V MHz pF
Q 85 to 170 CQ DQ
R 120 to 240 CR DR
S 170 to 340 CS DS
No-rank 85 to 340 C D Product of no-rank is not classified and have no indication for rank.
1
2SB1219, 2SB1219A
PC Ta
240 −800 −700 IB = −10 mA
Transistors
IC VCE
Ta = 25°C −800 −700
IC IB
VCE = −10 V Ta = 25°C
Collector power dissipation PC (mW)
200
160
Collector current IC (mA)
−500 −400 −300 −200 −100 0 −4 −8
120
−3 mA −2 mA −1 mA
80
40
0
Collector current IC (mA)
−600
−9 mA −8 mA −7 mA –6 mA −5 mA −4 mA
−600 −500 −400 −300 −200 −100 0 −2 −4 −6 −8 −10
0
40
80
120
160
0
−12
−16
−20
0
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
−100 −30 −10 −3 −1 Ta = 75°C 25°C −25°C IC / IB = 10
−100 −30 −10 −3 −1
VBE(sat) IC
IC / IB = 10
hFE IC
600 VCE = −10 V
Forward current transfer ratio hFE
500
400
25°C
Ta = −25°C 75°C
300 Ta = 75°C 200 25°C −25°C
− 0.3 − 0.1
− 0.3 − 0.1
− 0.03 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 −10
− 0.03 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 −10
100
0 − 0.01 − 0.03 − 0.1 − 0.3
−1
−3
−10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT IE
240
Cob VCB
24
VCER RBE
Collector to emitter voltage VCER (V)
IE = 0 f = 1 MHz Ta = 25°C
−120 IC = −2 mA Ta = 25°C
Collector output capacitance Cob (pF)
VCB = −10 V Ta = 25°C
Transition frequency fT (MHz)
200
20
−100
160
16
−80
120
12
−60 2SB1219A −40 2SB1219 −20
80
8
40
4
0
1
2
3
5
10
20 30 50
100
0 −1
−2 −3 −5
−10
−20−30 −50 −100
0
1
3
10
30
100
300
1 000
Emitter current IE (mA)
Collector to base voltage VCB (V)
Base to emitter resistance RBE (kΩ)
2
很抱歉,暂时无法提供与“2SB1219”相匹配的价格&库存,您可以联系我们找货
免费人工找货