2SB1253

Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –130 –110 –5 –10 –6 50 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –130V, IE = 0 VCE = –110V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –5A IC = –5A, IB = –5mA IC = –5A, IB = –5mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –5A, IB1 = –5mA, IB2 = 5mA, VCC = –50V 20 0.9 2.5 1.7 –110 2000 5000 30000 –2.5 –3.0 V V MHz µs µs µs min typ max –100 –100 –100 Unit µA µA µA V FE2 Rank classification Q P 5000 to 15000 8000 to 30000 Rank hFE2 1 Power Transistors PC — Ta 80 –12 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) IB=–5mA 2SB1253 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 VCE(sat) — IC IC/IB=1000 Collector power dissipation PC (W) 70 60 50 40 –10 –30 Collector current IC (A) –8 –6 (1) 30 20 (2) 10 (3) 0 0 20 40 60 80 100 120 140 160 –1mA – 0.9mA – 0.8mA – 0.7mA – 0.6mA – 0.5mA – 0.4mA – 0.3mA –10 TC=100˚C –3 25˚C –25˚C –4 –1 –2 – 0.2mA – 0.1mA – 0.3 0 0 –2 –4 –6 –8 –10 –12 – 0.1 – 0.1 – 0.3 –1 –3 –10 –30 –100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –100 hFE — IC 100000 VCE=–5V 1000 Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Forward current transfer ratio hFE 30000 –30 TC=100˚C 25˚C 300 10000 –25˚C –10 100 3000 1000 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –3 TC=–25˚C 30 –1 100˚C 25˚C 10 – 0.3 3 – 0.1 – 0.1 – 0.3 –1 –3 –10 –30 –100 –1 –3 –10 1 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf — IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (–IB1=IB2) VCC=–50V TC=25˚C tstg tf ton 0.3 0.1 0.03 0.01 0 –4 –8 –12 –16 Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C ICP t=1ms –3 –1 IC DC 10ms Switching time ton,tstg,tf (µs) 10 3 1 Collector current IC (A) –10 – 0.3 – 0.1 – 0.03 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 2SB1253 Thermal resistance Rth(t) (˚C/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3