Transistor
2SB1319
Silicon PNP epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9±0.1
0.4
2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5
1.5 R0.9 R0.9
0.85
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Ratings –30 –20 –7 –8 –5 1 150 –55 ~ +150 1cm2
Unit V V V A A W ˚C ˚C
3
2
1
2.5
2.5
1:Base 2:Collector 3:Emitter
EIAJ:SC–71 M Type Mold Package
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO IEBO VCEO VEBO hFE fT Cob
*1
Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A*2 IC = –3A, IB = –0.1A*2 VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz
min
typ
1.25±0.05
s Absolute Maximum Ratings
(Ta=25˚C)
0.55±0.1
0.45±0.05
max –100 –1
4.1±0.2
Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.0±0.1
R
0.
4.5±0.1
7
Unit nA µA V V
–20 –7 90 625 –1 120 85
*2
VCE(sat)
V MHz pF
Pulse measurement
*1h
FE
Rank classification
P 90 ~ 135 Q 120 ~ 205 R 180 ~ 625
Rank hFE
1
Transistor
PC — Ta
1.6 –6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C –5 IB=–50mA –45mA –10
2SB1319
IC — VCE
–12 VCE=–2V
IC — VBE
Collector power dissipation PC (W)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20
Collector current IC (A)
Collector current IC (A)
–40mA –35mA –30mA –25mA
–4
–8 Ta=75˚C –6
25˚C
–25˚C
–3
–20mA –15mA
–2
–10mA –5mA
–4
–1
–2
0 40 60 80 100 120 140 160 0 –1 –2 –3 –4 –5 –6
0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
hFE — IC
Collector to emitter saturation voltage VCE(sat) (V)
600 VCE=–2V –100 –30 –10 –3 –1
VCE(sat) — IC
IC/IB=30 240
fT — I E
VCB=–6V Ta=25˚C
Forward current transfer ratio hFE
Ta=75˚C 500 25˚C
Transition frequency fT (MHz)
–10
200
400
160
300
–25˚C
120
Ta=75˚C 25˚C –25˚C
200
– 0.3 – 0.1 – 0.03
80
100
40
0 – 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
– 0.01 – 0.01 – 0.03 – 0.1 – 0.3
0 –1 –3 1 3 10 30 100 300 1000
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob — VCB
300
Collector output capacitance Cob (pF)
250
IE=0 f=1MHz Ta=25˚C
200
150
100
50
0 –1
–3
–10
–30
–100
Collector to base voltage VCB (V)
2
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