2SB1321A

Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD1992A I Features • Large collector power dissipation PC (600 mW) • Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.65 max. 1.0 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −60 −50 −7 −1 −500 600 150 −55 to +150 Unit V V V A mA mW °C °C 1 2 3 0.45−0.05 2.5±0.5 2.5±0.5 +0.1 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+ 0.1 − 0.05 2.5±0.1 (HW Type) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 VCBO VCEO VEBO hFE1 *2 hFE2 Collector to emitter saturation voltage Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 No-rank 85 to 340 VCE(sat) fT Cob Conditions VCB = −20 V, IE = 0 VCE = −20 V, IB = 0 IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −10 V, IC = −10 mA VCE = −10 V, IC = −500 mA IC = −300 mA, IB = −30 mA VCB = −10 V, IE = 10 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz −60 −50 −7 85 40 − 0.35 200 6 15 − 0.6 V MHz pF 340 Min Typ Max − 0.1 −1 Unit µA µA V V V Product of no-rank is not classified and have no indication for rank. 14.5±0.5 0.85 3.5±0.1 0.8 1 2SB1321A PC  Ta 800 Transistors IC  VCE −1 200 Ta = 25°C −800 −700 IC  IB VCE = −10 V Ta = 25°C Collector power dissipation PC (mW) 700 600 500 400 300 200 100 0 −1 000 Collector current IC (mA) −800 IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA −600 −400 −200 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) −600 −500 −400 −300 −200 −100 0 0 −1 −2 −3 −4 −5 −6 −7 −8 −9 −10 0 –2 –4 –6 –8 –10 –12 Ambient temperature Ta (°C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat)  IC Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) −100 −30 −10 −3 −1 Ta = 75°C 25°C −25°C IC / IB = 10 −100 −30 −10 −3 −1 VBE(sat)  IC IC / IB = 10 hFE  IC 600 VCE = −10 V Forward current transfer ratio hFE 500 400 25°C Ta = −25°C 75°C 300 Ta = 75°C 200 25°C −25°C − 0.3 − 0.1 − 0.3 − 0.1 − 0.03 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 −10 − 0.03 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 −10 100 0 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 −10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT  IE 240 220 24 Cob  VCB Collector to emitter voltage VCER (V) Collector output capacitance Cob (pF) VCB = −10 V Ta = 25°C 22 20 18 16 14 12 10 8 6 4 2 IE = 0 f = 1 MHz Ta = 25°C VCER  RBE −120 IC = −2 mA Ta = 25°C Transition frequency fT (MHz) 200 180 160 140 120 100 80 60 40 20 0 1 2 3 5 10 20 30 50 100 −100 −80 −60 −40 −20 0 −1 −2 −3 −5 −10 −20−30 −50 −100 0 1 3 10 30 100 300 1 000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) 2 Transistors ICEO  Ta 104 VCE = −10 V 2SB1321A 103 ICEO (Ta) ICEO (Ta = 25°C) 102 10 1 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (°C) 3