2SB1322A

Transistors 2SB1322A Silicon PNP epitaxial planer type Unit: mm For low-frequency power amplification Complementary to 2SD1994A I Features • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −60 −50 −5 −1.5 −1 1 150 −55 to +150 Unit V V V A A W °C °C 1 2 3 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C 0.45−0.05 2.5±0.5 2.5±0.5 +0.1 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+ 0.1 − 0.05 Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 2.5±0.1 (HW Type) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 *2 Conditions VCB = −20 V, IE = 0 IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −10 V, IC = −500 mA VCE = −5 V, IC = −1 A IC = −500 mA, IB = −50 mA IC = −500 mA, IB = −50 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min −60 −50 −5 85 50 Typ Max − 0.1 14.5±0.5 0.5 4.5±0.1 Unit µA V V V 340 − 0.4 −1.2 200 20 30 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 VCE(sat) VBE(sat) fT Cob V V MHz pF R 120 to 240 S 170 to 340 No-rank 85 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SB1322A PC  Ta 1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness. −1.5 Transistors IC  VCE Ta = 25°C IB = −10 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA −1.2 VCE = −10 V TC = 25°C −1.0 IC  IB Collector power dissipation PC (W) 1.0 −1.25 Collector current IC (A) 0.8 −1.0 0.6 − 0.75 0.4 − 0.5 0.2 − 0.25 0 0 0 20 40 60 80 100 120 140 160 Collector current IC (A) −9 mA − 0.8 − 0.6 − 0.4 − 0.2 0 –2 –4 –6 –8 –10 0 0 −2 −4 −6 −8 −10 −12 Ambient temperature Ta (°C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat)  IC Collector to emitter saturation voltage VCE(sat) (V) VBE(sat)  IC Base to emitter saturation voltage VBE(sat) (V) −100 −30 −10 −3 −1 IC / IB = 10 hFE  IC 500 VCE = −10 V −100 −30 −10 −3 −1 Ta = 100°C 25°C IC / IB = 10 Forward current transfer ratio hFE 400 25°C 300 Ta = −25°C 100°C Ta = 100°C 25°C −25°C − 0.3 − 0.1 − 0.3 − 0.1 200 −25°C 100 − 0.03 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 −3 −10 − 0.03 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 −10 0 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 −10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT  IE 200 180 VCB = −10 V Ta = 25°C 60 Cob  VCB Collector to emitter voltage VCER (V) Collector output capacitance Cob (pF) IE = 0 f = 1 MHz Ta = 25°C VCER  RBE −120 IC = −10 mA Ta = 25°C Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 1 2 3 5 10 20 30 50 100 50 −100 40 −80 30 −60 20 −40 10 −20 0 −1 −3 −10 −30 −100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) 2 Transistors ICEO  Ta 104 VCE = −10 V −10 −3 2SB1322A Area of safe operation (ASO) Single pulse Ta = 25°C ICP IC t=1s t = 10 ms Collector current IC (A) 103 −1 − 0.3 − 0.1 ICEO (Ta) ICEO (Ta = 25°C) 102 − 0.03 − 0.01 10 − 0.003 1 0 20 40 60 80 100 120 140 160 − 0.001 − 0.1 − 0.3 −1 −3 −10 −30 −100 Ambient temperature Ta (°C) Collector to emitter voltage VCE (V) 3