2SB1361

Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –150 –150 –5 –15 –9 100 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 0.7 s Features 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = –150V, IE = 0 VEB = –3V, IC = 0 VCE = –5V, IC = –20mA VCE = –5V, IC = –1A VCE = –5V, IC = –7A VCE = –5V, IC = –7A IC = –7A, IB = – 0.7A VCE = –5V, IC = – 0.5A, f = 1MHz VCB = –10V, IE = 0, f = 1MHz 15 270 20 60 20 –1.8 –2.0 V V MHz pF 200 min typ max –50 –50 Unit µA µA Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 1 Power Transistors PC — Ta 120 2SB1361 IC — VCE –12 TC=25˚C –10 IB=–300mA –200mA –8 –150mA –6 –100mA –80mA –60mA –4 –40mA –20mA –10mA 0 0 0 –2 –4 –6 –8 –10 –12 0 –1 –2 –3 –10 –12 VCE=–5V IC — VBE Collector power dissipation PC (W) 100 Collector current IC (A) Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) 25˚C –8 TC=–25˚C 100˚C 80 60 (1) –6 40 –4 20 (2) (3) 0 0 20 40 60 80 100 120 140 160 –2 –2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 TC=100˚C 25˚C –25˚C 1000 hFE — IC VCE=–5V 1000 fT — IC VCE=–5V f=1MHz TC=25˚C Forward current transfer ratio hFE 300 Transition frequency fT (MHz) –1 –3 –10 –30 –100 TC=100˚C 25˚C 300 100 –25˚C 30 100 30 – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 10 10 3 3 –1 –3 –10 –30 –100 1 – 0.1 – 0.3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 Area of safe operation (ASO) –100 IE=0 f=1MHz TC=25˚C –30 Non repetitive pulse TC=25˚C ICP t=10ms –10 –3 –1 IC 100ms Collector output capacitance Cob (pF) 3000 1000 300 Collector current IC (A) DC 100 – 0.3 – 0.1 – 0.03 30 10 –1 –3 –10 –30 –100 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 2SB1361 Thermal resistance Rth(t) (˚C/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3