2SB1417

Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm s Features q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C) 5.0±0.1 10.0±0.2 1.0 90° 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 emitter voltage 2SB1417A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 0.55±0.1 C1.0 123 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1417 2SB1417A 2SB1417 2SB1417A 2SB1417 2SB1417A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –6V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.375A VCE = –5V, IC = – 0.2A, f = 10MHz IC = –1A, IB1 = – 0.1A, IB2 = 0.1A, VCC = –50V 30 0.3 1.0 0.2 –60 –80 70 10 –1.8 –1.2 V V MHz µs µs µs 250 min typ max –100 –100 –100 –100 –100 Unit µA µA µA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 Power Transistors PC — Ta 20 –6 (1) TC=Ta (2) Without heat sink (PC=2.0W) 15 TC=25˚C –5 2SB1417, 2SB1417A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=8 –30 –10 –3 –1 TC=–25˚C 100˚C VCE(sat) — IC Collector power dissipation PC (W) Collector current IC (A) IB=–100mA –4 –90mA –80mA –70mA –60mA –50mA –40mA –30mA 10 (1) –3 –2 –20mA – 0.3 – 0.1 – 0.03 5 –10mA –1 25˚C (2) 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 –100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) IC — VBE –6 VCE=–4V 100000 hFE — IC 10000 VCE=–4V 3000 1000 300 100 30 10 3 fT — IC VCE=–5V f=10MHz TC=25˚C Forward current transfer ratio hFE –5 10000 –4 TC=100˚C 3000 1000 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 TC=100˚C –25˚C 25˚C –3 –2 25˚C –1 –25˚C 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Transition frequency fT (MHz) –3 –10 30000 Collector current IC (A) –1 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Base to emitter voltage VBE (V) Collector current IC (A) Collector current IC (A) Cob — VCB 1000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=–IB2) VCC=–200V TC=25˚C Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (µs) 300 10 3 1 0.3 0.1 0.03 tstg Collector current IC (A) –10 ICP –3 –1 IC 10ms DC t=1ms 100 30 10 ton – 0.3 – 0.1 – 0.03 – 0.01 –1 3 1 –1 0.01 –3 –10 –30 –100 0 –1 –2 –3 –4 –3 –10 –30 –100 –300 –1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB1417A tf 2SB1417 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 2SB1417, 2SB1417A Thermal resistance Rth(t) (˚C/W) 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3