2SB1438

Transistor 2SB1438 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q q Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –100 –100 –5 –3 –2 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 0.45–0.05 0.45–0.05 +0.1 +0.1 2.5±0.5 2.5±0.5 2 3 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 1 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 2.5±0.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = –50V, IE = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –200mA VCE = –2V, IC = –1A*2 IC = –1A, IB = –50mA*2 IC = –1A, IB = –50mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max – 0.1 14.5±0.5 Unit µA V V V –100 –100 –5 120 60 – 0.17 – 0.85 90 70 *2 340 – 0.3 –1.2 V V MHz 90 pF Pulse measurement *1h FE1 Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 1.2 –2.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C –1.8 2SB1438 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –10 –3 –1 VCE(sat) — IC IC/IB=20 Collector power dissipation PC (W) 1.0 Collector current IC (A) –1.6 –1.4 –1.2 –1.0 IB=–8mA –7mA –6mA –5mA –4mA –3mA –2mA 0.8 – 0.3 – 0.1 – 0.03 – 0.01 25˚C Ta=100˚C 0.6 – 0.8 – 0.6 – 0.4 – 0.2 –25˚C 0.4 0.2 – 0.003 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –1mA 0 –2 –4 –6 –8 –10 0 0 20 40 60 80 100 120 140 160 0 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –100 hFE — IC IC/IB=20 500 VCE=–2V 200 180 450 400 350 300 Ta=100˚C 250 200 150 100 50 0 – 0.01 – 0.03 – 0.1 – 0.3 25˚C –25˚C fT — I E VCB=–10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) Transition frequency fT (MHz) –1 –3 –10 –30 –10 –3 25˚C –1 100˚C Ta=–25˚C Forward current transfer ratio hFE 160 140 120 100 80 60 40 20 0 1 3 10 30 100 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 240 Collector output capacitance Cob (pF) 200 IE=0 f=1MHz Ta=25˚C 160 120 80 40 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2