2SB1440

Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm s Features q q 4.5±0.1 1.6±0.2 1.5±0.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 4.0–0.20 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –50 –50 –5 –3 –2 1* 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 0.4±0.04 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1I Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * Conditions IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –200mA VCE = –2V, IC = –1A IC = –1A, IB = –50mA IC = –1A, IB = –50mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –50 –50 –5 120 60 typ max 340 – 0.2 – 0.85 80 45 – 0.3 –1.2 60 *h FE1 Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 2.5±0.1 +0.25 Unit V V V V V MHz pF 1 Transistor PC — Ta 1.4 2SB1440 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –120 Ta=25˚C –100 IB=700µA 600µA –80 500µA –60 400µA 300µA 200µA –20 100µA –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=20 Collector power dissipation PC (W) 1.2 1.0 0.8 0.6 Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. –40 – 0.3 – 0.1 – 0.03 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –100 hFE — IC IC/IB=20 10000 VCE=–2V 240 fT — I E VCB=–10V f=200MHz Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) Transition frequency fT (MHz) –3 –10 –30 –10 –3 25˚C –1 Ta=–25˚C 75˚C Forward current transfer ratio hFE 3000 1000 300 Ta=75˚C 100 –25˚C 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 25˚C 200 160 120 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 80 40 0 –1 1 3 10 30 100 –1 –3 –10 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 120 Collector output capacitance Cob (pF) 100 IE=0 f=1MHz Ta=25˚C 80 60 40 20 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2